3.1. Characters of SiBN fibers with different boron contents
Figure 1 showed the SEM micrographs of SiBN fibers with different boron contents. It can be seen that all of the fibers showed rather smooth surface and dense cross sections, no obvious defects were detected. However, the rough surface in nanoscale could be distinguished from the 3-dimensional AFM images especially for SNB-0 and SNB-3 fibers, with surface roughness (Ra) of 3.84 nm and 4.78 nm, respectively. While SNB-5 and SNB-7 fibers showed a rather lower surface roughness (Ra) of 3.25 nm and 1.85 nm, respectively. According to the tensile strength values in Table 1, it can be conclude that SiBN fibers with lower surface roughness present higher tensile strength values.
The microstructure of the obtained SiBN fibers was studied by XRD patterns, as presented in Fig. 2a. The results showed that all of the fibers were totally amorphous, without diffraction peaks detected. The TEM micrographs and the corresponding SAED patterns of SNB-5 fibers also presented the amorphous characteristic of SiBN fibers (Fig. 2b). These experimental data agreed with the results that reported from other research groups [12, 19].
For studying the chemical state of SiBN fibers, the fiber surface was analyzed by XPS, as presented in Fig. 3. The XPS spectra showed that the SiBN fibers were mainly consisted of Si, B, N as well as small amounts of C and O, which agreed well with the chemical composition analysis in Table 1. For different SiBN fibers, the intensity for the signals of B could be obviously distinguished, indicating the different boron contents for the fibers. The XPS spectra peaks of SNB-5 fibers were further analyzed by curve-fitting with Gauss-Lorentz Equation, as shown in Fig. 3b ~ d. The Si2p peak could be fitted into two peaks: the strong peak located at 101.8 eV was contributed to the Si − N bond in Si3N4 phase [20], while the very weak peak located at 100.0 eV was related to the C − Si − N bond in SiCxNy phase. The B1s peak could be fitted with only one peak that located at 190.8 eV, indicating the boron in SiBN fibers was mainly existed in the form of B − N bond in BN phase [21]. While the N1s peak could be fitted into two peaks that located at 397.4 eV and 398.3 eV, which were related to N − Si bond and N − B bond, respectively [22]. Thus, all of the results above indicated that the SiBN fibers were mainly consisted of Si3N4 phase and BN phase. Meanwhile, the Si − N−B networks that distributed between Si3N4 phase and BN phase may also form in the fibers [16].
3.2. Oxidation behavior of SiBN fibers with different boron contents
According to the previous microstructure and composition analysis, SiBN fibers were mainly consisted of amorphous Si3N4, BN and properly Si − N−B networks. These components could be oxidized and formed oxide such as SiO2 and B2O3, which finally caused the increasing of oxygen content for SiBN fibers after the oxidizing treatment. Table 2 listed the oxygen content for SiBN fibers with different boron contents after oxidizing at the temperature range of 1000 ~ 1400℃. When the oxidation temperature was 1000℃, the oxygen content of SNB-0 and SNB-3 fibers showed almost unchanged, while SNB-5 and SNB-7 fibers presented an oxygen content increment of about 2 wt%. These results indicated that the SiBN fibers with higher boron content consequently higher BN content, were more easily to be oxidized. As the oxidizing temperature increasing to above 1200℃, the oxygen content for all of the SiBN fibers increased obviously. As for SNB-5 and SNB-7 fibers, although they were more easily to be oxidized, the increasing rate for the oxygen content when the oxidizing temperature increasing was slower than SNB-0 and SNB-3 fibers, which may be contributed to the escape of amounts of B2O3 at high temperatures.
Table 2
Oxygen content of SiBN fibers after oxidizing at different temperatures in air for 1 hour
Temperature (℃) | Oxygen content (wt%) |
SNB-0 | SNB-3 | SNB-5 | SNB-7 |
As received | 2.15 (/)* | 2.33 (/) | 1.60(/) | 1.74(/) |
1000 | 2.70 (0.55) | 2.15 (-0.18) | 3.58 (1.98) | 4.06 (2.32) |
1200 | 3.24 (1.09) | 3.88 (1.55) | 4.55 (2.95) | 4.83 (3.09) |
1300 | 4.35 (2.20) | 5.29 (2.96) | 5.44 (3.84) | 5.06 (3.32) |
1400 | 6.62 (4.47) | 6.75 (4.42) | 6.56 (4.96) | 6.55 (4.81) |
* The numbers in the parentheses are the oxygen-content increment that comparing with the as received fibers. |
For studying the microstructure evolution of SiBN fibers after oxidizing treatment, all of the fiber surface after oxidizing at 1300℃ for 1 hour was analyzed by XPS, as presented in Fig. 4. The results showed that the all of the fiber surface was mainly consisted of Si and O, while the B was not detected, indicating the escape of boron in the form of B2O3 gas at high temperature, which agreed well with the chemical composition analysis. From the fitting cures for the Si2p peak of the oxidized SNB-5 fibers that located at the position of 104.0 eV, the chemical composition of the fiber surface was determined to be SiO2, which was formed by the oxidation of Si3N4 phase [23].
The microtopography of SiBN fibers after the oxidizing treatment was observed by SEM. Figure 5 presented the SEM micrographs of fiber cross section and surface for SiBN fibers with different boron contents after oxidizing at 1300℃ for 1 hour. The results showed that the oxidized SNB-0 fibers presented an oxidation layer of 304 nm, with the formation of obvious cracks between the oxidation layer and fiber interior. The thickness of the oxidation layer for SNB-3 and SNB-5 fibers was 274 nm and 318 nm, which was very close to SNB-0 fibers. However, the interface between the oxidation layer and fiber interior showed rather dense, which is different from the interface of SNB-0 fibers. This phenomenon may be contributed to the self-healing effect when part of the molten B2O3 infiltrated into the oxidation interface. As for SNB-7 fibers, the oxidation layer was showed the lowest thickness of 217 nm, which should be caused by the excessive volatilization of B2O3 gas at high temperature.
Figure 6 showed the SEM micrographs of SNB-5 fibers after oxidizing at 1000 ~ 1400℃ for 1 hour. When the oxidizing temperature reached 1000℃, there was no obvious oxidation layer observed on the fiber cross section. As the oxidizing temperature increased to 1200℃, the oxidation layer with thickness of about 185 nm was detected. When the oxidizing temperature reached to 1300℃ and 1400℃, the thickness of oxidation layer could increase to 318 nm and 512 nm, respectively. The increasing of the oxidation layer thickness was corresponded with the increasing of oxygen content. From the SEM micrographs of the fiber surface, it can be seen that SNB-5 fibers remained smooth surface even after oxidizing at 1400℃, without detecting the obvious cracks that caused by the mismatch of thermal expansion between the oxidation layer and fiber interior. The smooth surface may be benefit for fibers to remain a rather high mechanical properties after the oxidizing treatment, which will analyzed in the following discussion.
For analyzing the oxidation process of SiBN fibers, the microstructure of oxidation layer was first investigated by the secondary ion mass spectroscopy (SIMS). Figure 7 showed the SIMS depth analysis results of the surface for SNB-5 fibers after oxidizing at 1300℃ for 1 hour. According to the intensity of the sputtering oxygen ion signals, the thickness of the oxidation layer for SNB-5 fibers after oxidizing was about 330 nm, which agreed very well with the thickness value that obtained from the SEM micrographs. Meanwhile, the oxidation layer was followed by a 75 nm depth region with the oxygen ion signals gradual decreasing, which indicated the formation of transitional oxidation layer between the oxidation layer and the fiber interior. By analyzing the intensity of boron ion signals, the oxidation layer could be finely divided into three refined microstructural layer: the outside layer with thickness about 150 nm showed very weak boron ion signals, thus this layer was mainly consisted of SiO2, also indicating the escape of boron in the form of B2O3 gas at the fiber surface. The following layer was a transitional region with thickness of about 50 nm, where the intensity of boron and nitrogen ion signals increased gradually as the testing depth increasing. Considering the boron content increased along with the nitrogen content, the boron atoms and nitrogen atoms may exist in the form of BN phase, which could be precipitated from the reduction between Si3N4 and the inspersed B2O3. Previous reports also found the precipitated BN in the oxidation layer of SiBCN fibers [15, 24]. With the depth analysis further increasing, the ion signals of boron, nitrogen and oxygen remained stable at the layer with thickness of about 140 nm. This layer presented rather high boron content may consist of more amount of BN could precipitate from the oxidation layer, which finally formed the SiO2/BN layer.
The microstructure of the oxidizing layer was further studied by analyzing the FIB slice of SNB-5 fibers after oxidizing in air at 1300℃ for 1 h. From the TEM micrograph of the slice (Fig. 8a) as well as the enlarged micrograph (Fig. 8f), the oxidation layer could be clearly divided into three layers: the outside layer (Ⅰ) with about 200 nm thickness was totally amorphous SiO2. The following layer (Ⅱ) with thickness about 150 nm showed the precipitation of nanoparticles. The HR-TEM micrographs presented that the nanoparticles was h-BN with interplanar spacing of 0.34 nm. Thus, these results showed the direct evidence for the existence of SiO2/BN layer. Meanwhile, there is a thin interfacial layer (Ⅱ´) with thickness of about 60 nm, which distributing between the SiO2/BN layer and the fiber interior was the transition region. The formation of three layers in the oxidation layer agreed well with the SIMS results in Fig. 7 (The transition layer between SiO2 and SiO2/BN layer was unobvious to be detected in the TEM micrographs).
According to the SIMS and TEM analysis, the microstructure for the oxidation layer of SiBN fibers could be described by the model in Fig. 9a, in which the oxidation layer could be divided into SiO2 layer and SiO2/BN layer. Meanwhile, two different transition layer could also be observed, one was distributed between the SiO2 layer and SiO2/BN layer, the other was formed between the SiO2/BN layer and unoxidized fiber interior. Based on the microstructural model of the oxidation layer, the oxidizing process of SiBN fibers could be described as the schematic diagram in Fig. 9b. When SiBN fibers were oxidized in the air at high temperature, the BN and Si3N4 phase in fibers could be oxidized to form the oxide such as B2O3 and SiO2, respectively (Reaction 1 and 3). In the fiber surface, the molten B2O3 was easily to escape as gas state at high temperature (Reaction 2). Thus, the fiber surface after oxidizing was mainly consisted of remained SiO2. As the fiber further oxidized, the molten B2O3 formed at the inside may infiltrate into the fiber interior to react with Si3N4, which finally caused the precipitation of h-BN nanoparticles (Reaction 4), as consequently, formed the SiO2/BN layer. All of the layer with different chemical compositions presented the formation of transition layer due to the diffusion-controlled oxidizing process. The infiltration of molten B2O3 may act as the self-healing composition, which is benefit for reducing the cracks in the fibers.
2BN(s) + 1.5O2(g) = B2O3(l) + N2(g) | (Reaction 1) |
B2O3(l) = B2O3(g) | (Reaction 2) |
Si3N4(s) + 3O2(g) = 3SiO2(s) + 2N2(g) | (Reaction 3) |
2B2O3(l) + Si3N4(s) = 3SiO2(s) + 4BN(s) | (Reaction 4) |
Figure 10 calculated the changes of the standard Gibbs free energy of Reaction 1 ~ 4 in the temperature range of 1000 ~ 2000℃. The results showed that the standard Gibbs free energy of Reaction 1, 3 and 4 was negative, indicating these reactions could occur at above 1000℃. As for Reaction 2 that related to the gasification of molten B2O3, the standard Gibbs free energy was positive. However, when considering the very low partial pressure of B2O3 in the air, the Reaction 2 could occur to balance the equilibrium of reaction. Thus, the calculated results confirmed the reactions that mentioned in the oxidation process (Fig. 9b).