In this paper, for the first time, we use a distinctive approach based on oxide strip layer in dual material stack gate oxide-tunnel field-effect transistor (DMSGO-OSL-TFET) to improve the DC, analog/RF, and linearity performance. For this, a stack gate oxide with workfunction is considered to enhance the ONstate current (ION ) and reduce the ambipolar current (Iamb). For this case, the gate electrode is tri-segmented, named as tunnel gate (M1), control gate (M2) and auxiliary gate (M3) with different gate lengths (L1, L2, L3) and work functions (φ1, φ2, φ3), respectively. To maintain dual-work functionality, the possible combinations of these work functions are considered. Technology computer-aided design (TCAD) simulations are performed and noted that the workfunction combination (φ1 = φ3 < φ2) outperforms compared to other structures. Where φ1 on the source side is used to enhance the ION , while φ3 (equal to φ1) is used on the drain side to minimize the Iamb. To further enhance the device performance, a high-K oxide strip layer is considered on the drain side to suppress the (Iamb) whereas, a low-K oxide strip layer is used at the source junction to maximize the ION . Moreover, length of gate segments, oxide strip layer height, and thickness are optimized to achieve a better ION , switching ratio, subthreshold swing (SS) and reduce the (Iamb) which helps in the gain of device and design of analog/RF circuits. The proposed device as compared to dual material control gate-oxide strip layer-TFET (DMCG-OSL-TFET) shows improvement in ION /IOF F (∼ 4.23 times), 84 % increase in transconductance (gm), 136 % increase in cut-off frequency (fT ), 126 % increase in gain bandwidth product (GBP), point subthreshold swing (15.8 mV/decade) and other significant improvements in linearity performance parameters such as gm3, VIP3, IIP3, IMD3 making the proposed device useful for low power switching, analog/RF and linearity applications.