Solar cells are sensitive to the temperature, and the temperature enhancement will result in performance degradation1-6. The elevated temperature of an operating cell mainly comes from the non-photoelectric conversion of the absorbed solar energy7. For a cell with a power conversion efficiency (PCE) of 25%, the maximum heating power under 1 sun AM 1.5 G illumination could reach 750 W m-2. Typically for some extreme conditions, this heating power can make the cell temperature exceeding 100°C8-9. This high temperature is a severe threat to the cell operational stability, and also put forward higher demand to the encapsulation reliability10. Among solar cells, perovskite solar cells (PSCs) are much more sensitive to the elevated temperature11-16. Firstly, elevated temperature could cause the organic component volatilization of perovskite absorber materials11,12, accelerate ion (defect) migration and phase segregation13,14, and induce metastable crystal structure15,16. Secondly, elevated temperature could change or destroy the microstructures of functional layers, even charge transporting ability of the organic hole transporting material17,18. Thirdly, elevated temperature could induce and accelerate the atom or component diffusion between different functional layers19,20.
Numerous works have been reported to overcome this operational stability issue based on improving the heat resistance of functional layers of the cell. For instance, dimension regulation, additive engineering, surface passivation, and process optimization routes are employed to suppress the decomposition or phase transition of perovskite absorber layers at high temperatures21-24. A series of new hole transport layer materials with higher thermal stability have also been developed25,26. Although obvious progress has been achieved in the past few years, the stability performance of the PSC is still less satisfactory than commercialized inorganic solar cells.
Along with focusing on materials and interfacial stabilities, thermal management toward the complete cell started to receive attention. The primary concept of thermal management has been introduced to the PSC solar system by reducing the heating power and enhancing the heat dissipation, for example, doping higher thermal conductivity materials, optimizing device geometrical structure, and attaching heat spreaders etc.27-29. Under thermal equilibrium conditions, compared to improving interior thermal conduction, enhancing the heat dissipation of the cell terminals actually plays a more critical role in cooling the whole cell. In some practical applications, passive liquid flow cooling or heat sink structures have been integrated into the photovoltaic systems for this purpose; however, these external cooling components would significantly increase the photovoltaic installation and maintenance cost30-32. Thus, it is still a challenge to actively cool the operating cell in a low-cost, easy scale-up and large-scale way.
Herein, we introduce the spontaneous radiative cooling effect into the PSC to enhance terminal heat dissipation of the cell. This effect is realized by functional structure design of a full-carbon electrode (F-CE) that simultaneously has high thermal emissivity and excellent electrical properties. Superior interfacial contact and charge transporting ability of the F-CEs contribute to >19% and >23% PCEs of inorganic CsPbI3 and hybrid PSCs, respectively, both of which are the highest reported efficiencies, comparative to the results for metal electrodes. The radiative cooling effect of the F-CEs can reduce the temperature of the operating cell (AM 1.5 G, 1 sun) by ~10°C. For operational stability test, no PCE degradation was found in F-CE based CsPbI3 cell under continuously tracking over 2000 hours. For low/high temperature-cycling test (-20/60 °C), the F-CE based CsPbI3 cell can sustain 95% of the initial PCE over 100 cycles whereas the relative PCE of the Au electrode-based cell drops by >35%. These results suggest that thermal radiative cooling approach of the F-CE electrode can provide a universal, convenient and low-cost solution to overcome the efficiency degradation of the cell induced by temperature elevation during the cell operation.
Heat generation and dissipation properties of PSCs
We first demonstrate the heat generation and dissipation properties of the PSCs. As shown in Fig. 1a, thermal conduction, convection and radiation are the three main heat dissipation pathways. Heat generation properties caused by the light absorption of the PSC are experimentally estimated from light reflection/transmission and external quantum efficiency spectra of the cell (Supplementary Figs. 1-2). It is estimated that the cell absorbs ~97% of the entire sun illumination by the perovskite absorber layer (46%) and other functional layers (51%) (see Fig. 1b). Considering 20% PCE, the heating power of the cell illuminated under AM 1.5G (1 sun) is 770 W m-2. Using these parameters, the cell interior temperature is simulated while considering various thermal radiation configurations (Supplementary Figs. 3-6 and Supplementary Table 1). As presented in Fig. 1c, at room temperature, the interior temperature can reach 94.8°C if the cell does not have thermal radiative cooling. If the cell emits thermal radiation from a single surface, for example, the conductive glass surface, the temperature obviously decreases to 65.9°C. This could be the practical condition of a PSC with metal back electrode. If the back electrode also emits thermal radiation, the cell temperature will further decrease to 54.5°C, which can guarantee the cell working under a relatively moderate condition. This cooling effect of the dual-face thermal radiation will always work whatever the ambient temperature is. When the cell works in the vacuum, for example, in the near space, this cell cooling effect benefiting from the dual-face thermal radiation will be more impressive (Supplementary Figs. 7).
Inspired by the simulation results, we have designed a triple-layer full-carbon back electrode (F-CE) to realize dual-face thermal radiative cooling for PSCs, as schematically shown in Fig. 1d and Supplementary Figs. 8. This F-CE is comprised of a mesoporous layer having excellent contact with the hole transporting layer (HTL), a highly conductive graphite layer and a thermally radiative layer with efficient thermal radiation ability. Thermal radiative properties of varied electrodes are characterized by IR apparent temperature TIR (measured with IR camera) and their real surface temperature T0 (measured by thermocouple). When the T0 increases to 90°C, TIR of the Au electrode is 38.7°C (Fig. 1e). For another alternative electrode, Sn: In2O3 (i.e., ITO), its TIR is 48.6°C. Comparatively, TIR of our triple-layer F-CE reaches 89.5°C, very close to the T0. If the F-CE does not have the thermal radiative layer, its TIR is 66.4°C. Thermal radiation ability of these electrodes is further quantified by using emissivity (ε) 33, that is, ε ≈ (TIR/T0)4. The ε of the Au and ITO electrode are only 0.034 and 0.085 (Fig. 1f), respectively, and for the simplest single-layer carbon electrode, its ε is 0.93. If a graphite layer is introduced to enhance the carbon electrode conductance, the ε decreases to 0.3 (Fig. 1f and Supplementary Figs. 8). For our designed triple-layer F-CE, the ε reaches 0.98, very close to an ideal black body. In addition, the triple-layer F-CE has large charge conductance because of the interior graphite layer, which is suitable for the PSCs (Supplementary Figs. 9).
Photovoltaic performance of PSCs
We use the F-CE to fabricate inorganic CsPbI3 and hybrid (FA0.97Cs0.03PbI0.97Br0.03) PSCs. The cell structure of the CsPbI3 solar cell, comprising of FTO (F: SnO2) glass, TiO2, CsPbI3, spiro-OMeTAD and F-CE, is shown in Fig. 2a. Carbon quantum dots (CQD) are introduced to improve the energy alignment of the F-CE/HTL interface. The CQDs are synthesized from hydrothermal method and evenly dispersed in water (Fig. 2b and Supplementary Figs. 10-11). These CQDs with the size of ~ 10 nm, can fill into the undulating area of the F-CE to reduce the surface roughness and modify the work function as well (Supplementary Figs. 12-14). The F-CE is thermally pressed onto the top of the cell, which can guarantee the F-CE robustly contacted with the HTL with adhesive force reaching 3.6 N cm-2, about two orders of magnitude higher than that of the HTL/Au contact (0.07 N cm-2) (Supplementary Figs. 15). This is mainly attributed to the thermal-press approach can make the CE and HTL embed into each other, which will obviously change the film surface morphology and electrical potential (Fig. 2c and d). This not only benefits for the charge interface transfer but also facilitates the heat conduction within the cell.
With the designed F-CE, a record 19.68% PCE (steady-state PCE: 19.23%) has been achieved for the CsPbI3 cell with short-circuit current density (JSC) of 20.36 mA cm-2, open-circuit voltage (VOC) of 1.170 V and fill factor (FF) of 0.826 (Fig. 2e, Supplementary Figs. 16-20, and Supplementary Table 2). In addition, a certified PCE of 19.6% (reverse scanning) is also obtained, comparable to the corresponding Au electrode-based cell (PCE: 20.39%) (Supplementary Figs. 21). In the past few years, PCEs of the carbon-based inorganic perovskite cells (including CsPbI3, CsPbI2Br, CsPbIBr2 and CsPbBr3) indeed rises linearly (Fig. 2f, Supplementary Table 3). As in mid-2021, the highest reported PCE was ~15% while the PCE gap between the Au and carbon-based devices has exceeded 5% in absolute value. Our current result has already narrowed the PCE gap to <1.0%. Besides the CsPbI3 cells, the state-of-the-art carbon-based hybrid PSCs have also been achieved with 23.5% PCE (Supplementary Figs. 22-24). These results demonstrate that the F-CE is a promising electrode technology for the PSCs.
Phase stability of CsPbI3
We further experimentally evaluate the cooling effect of the F-CE on the temperature of the operating cell under AM 1.5 G illumination (Fig. 3a-b). It is found that, the F-CE can reduce the cell surface temperature by ~10°C, from 53.1 (Au electrode) to 45.2 °C; under 2 sun illumination, the cell temperature will reduce from 73.6 to 62.7 °C (Supplementary Figs. 25). This cooling effect will significantly enhance the ambient phase stability of the CsPbI3 film in the cell. As indicated by time-dependent X-ray diffraction (XRD) shown in Fig. 3c-d, β-phase CsPbI3 in the Au based PSC gradually transforms into δ-phase after being illuminated for several hours in ambient conditions. Comparatively, the CsPbI3 in the F-CE based PSC exhibits stable β-phase and constant XRD intensity in the whole illumination aging duration. It is also demonstrated that the temperature itself has obvious influence on the shelf life of the cell. Elevated temperature (such as 65°C) can easily cause PCE degradation and CsPbI3 phase transition in a complete cell, whereas only 10°C reduction will effectively improve the device stability (Supplementary Figs. 26-27).
Stability performance of PSCs
Lastly, we used different aging processes to evaluate the operational stability of the cells. After working at the maximum power point (MPP) under AM 1.5 G (1 sun) for 3000 s in ambient conditions, no PCE degradation can be found for the F-CE based unencapsulated cell, whereas the PCE of the Au-based cell dropped to 92% of its initial value (Fig. 4a). Under concentrated 10 suns illumination, the PCE of the F-CE based cell only decreased to 94% of its initial value, whereas the PCE of the Au electrode-based cell obviously dropped to 78% (Fig. 4b, and Supplementary Figs. 28-29). We further tracked 2000 hour’s operational stability in N2 atmosphere while keeping the cell continuously working under a steady-state bias voltage (0.95 V) and white LED illumination (initial cell current density 20 mA cm-2). The PCE of the F-CE based cell slightly increased in the first 400 hours, then kept almost constant from 500 to 2000 hours (Fig. 4c). To the best of our knowledge, this is one of the best operational stability results among the CsPbI3 solar cells reported so far (Supplementary Table 4). Instead, the PCE of the Au based cell continuously degraded in the whole aging process, only sustaining 82% of its initial PCE after 2000 hours. Finally, we conducted low-high temperature (-20/60°C) aging test (Fig. 4d). The temperature range between -20 and 60°C was cycled for 100 times by using a semiconductor cooling plate, and the time duration at each temperature in one cycle is 15 min. After the aging process, the PCE of the Au-based cell dropped to <70% of its initial value while the F-CE based cell still can sustain 95% of its initial value. This better temperature-cycling stability mainly benefits from both the temperature buffering effect of the F-CE and the robust HTL/F-CE interface contact (Supplementary Figs. 30).