Here in, we investigated the impact of negative capacitance in PGP-SELBOX NCFET (partial ground plane on a selective buried oxide in negative capacitance FET) over FDSOI. The ferro-electric layer is placed in the gate stack of PGP-SELBOX NCFET to generate the negative capacitance phenomenon. Ferroelectric(FE) materials are similar to dielectric materials but differ in terms of their polarization properties. FE-HFO 2 is used as ferroelectric material due to its sufficient polarization rate with high dielectric capacitance and better reliability. The effect of ferro-electric material parameters like coercive field(E c ) and remnant polarization(P R ) on the capacitance matching of NCFET are analyzed. The simulation results reveal that the R PE factor, which is the ratio of P R to E c , is closely
related to better capacitance matching. In addition, the effect of variation in thickness of ferro-electric layer on the average sub-threshold swing(SS) is also explored. The relation between short channel effects ( V th rolloff and DIBL) and thickness of the ferro-electric (t fe ) for
PGP-SELBOX NCFET is also analyzed. The simulation results clearly show that PGP-SELBOX NCFET is having reduced SCEs and 10 3 times better II OFF ON ratio over FDSOI NCFET. For optimized value of ferroelectric parameters average SS for proposed device is
found as 50 mV/decade at t fe = 5nm which is lesser than FDSOI NCFET ( 56 mV/decade)