In this paper, the analog/RF analysis of SiGe source-based heterojunction Tunnel FET is reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source capacitance (CGS), gate-drain capacitance (CGD), cut-off frequency (fT) and gain-bandwidth product (GBP) are studied. DC, as well as AC simulations, have been performed on the proposed device. We have achieved an ON current of 0.537 µA/µm and OFF current of 13 fA/µm, thus achieving ION/IOFF ratio as 3.72×1010. We have also performed temperature analysis of the analog/RF parameters. We have also investigated the device for the temperature analysis concerning the drain current and the capacitance calculations. We have observed that the OFF currents are strongly dependent on the temperature. All the simulations have been performed on Visual TCAD (licensed version 1.9.2-3).