Polarons are quasiparticles that result from a strong coupling regime between electron or a hole and ions in nanomaterials. Polarons manifest themselves in many different ways under the influence of external electric and (or) magnetic fields. This paper investigates the influence of strong electric field on polaron properties in semiconductor quantum dot (SCQD). We used the modified Lee Low Pines Huybrecht method to derive fundamental and first state energy of polaron. The superposition of these two states energies which form a quantum bit considered as a two level system (TLS) allowed us to evaluate the probability density, capacitance and conductance of the polaron under the Drude model. Our results indicate that the electric field possesses pronounced effects on the properties of polaron in SCQD. Some of these effects include but are not limited to: (i) the variation of the probability density according to the x and y planar coordinates; (2i) the periodical modification of the probability density with electric field frequency and its dependence on longitudinal optical (LO) phonon-coupling strength constant; (3i) the observation of both positive and negative values of the energy of the system, indicating the formation of free and couple polaronic entities in the system. In particular, we found that the ground state energy of the polaron is predominant in Galium Arsenide (GaAs) SCQD. It comes that, the investigation of strong polaron-electric field (laser radiation) is quite indicated in the case of Galium Arsenide (GaAs).