Figure 1 shows the preparation process of NiCo2S4/rGO nanocomposites. First, Co-based MOFs grown in situ on sheet graphene were prepared. Ni2+ is introduced to hydrolyze and produce H+ into Co MOF, which destroys the coordination bonds of Co2+ and 2-MIM in MOF. This causes the Co2+ inside to diffuse outwards, but in the process of diffusion, O2 and NO3− in the solution will oxidize it into partial Co2+/Co3+. At the same time, the outer Ni2+ will also spread into the MOF. In this process, the two combine and precipitate to form NiCo-LDH [37]. However, due to the different diffusion rates of the two metal ions, a hollow NiCo-LDH structure is formed (Kirkendall effect) [38]. NiCo2S4/rGO nanocomposites can be obtained by grinding NiCo-LDH and sulfur powder through high-temperature vulcanization.
Figure 2 is a detailed analysis of the crystal structure of the material by X-ray diffraction. We can see that the diffraction peak of graphene oxide is at 11.4° corresponding to its (220) crystal face [39]. In addition, the diffraction peaks of NiCo2S4 nanomaterial are 16.3°, 26.8°, 31.5°, 38.3°, 50.4° and 55.3° corresponding to (110), (220), (311), (400), (511) and (440) crystal planes, respectively. It corresponds exactly to the standard card (JCPDS No. 20–0782) [40]. It can be found from the XRD pattern that NiCo2S4/rGO improves significantly with the increase of rGO content when it is about 25.7° compared with NiCo2S4. This is because GO has been reduced to rGO during the process of high-temperature vulcanization of the sample, and the diffraction peak of rGO is 25.7°, which leads to this result, which also proves the existence of rGO in the composite material [41]. In summary, it can be found that we have successfully prepared NiCo2S4/rGO nanocomposites with good crystallinity.
Figure 3 shows the X-ray photoelectron spectroscopy (XPS) characterization of NiCo2S4/20rGO in order to analyze the chemical composition and valence states of the material. Figure 3(a) is an XPS of S 2p with two satellite peaks at 169 ev and 170.1 ev. Among them, the satellite peak at 169 ev may be from the sulfur oxide caused by O2 oxidation, and the satellite peak at 170.1 ev. This may be from the C-S bond formed by the combination of the C element and S element in rGO [42]. And there are also two peaks at 162.7 ev and 161.5 ev corresponding to S 2p3/2 and S 2p1/2 respectively, which are the peaks shown by S2−. Figure 3(b) is the XPS diagram of the C 1s, where the binding energies at 284.8 ev, 285.4 ev, 286.6 ev, and 288.9 ev correspond to the C-C, C-O-C, C-O, and O = C-O bonds, respectively. Figure 3(c) is the XPS diagram of Ni 2p, where we can find that there are two spin double orbital peaks, Ni2+ and Ni3+. Ni2+ corresponds to two diffraction peaks at 857.5 ev (Ni 2p3/2) and 876.5 ev (Ni 2p1/2). Ni3+ corresponds to two diffraction peaks at 853.5 ev (Ni 2p3/2) and 874.1 ev (Ni 2p1/2). In addition, it also has two satellite peaks at 862.0 ev and 881.2 ev. Figure 3(d) is an XPS diagram of Co 2p, which also has two satellite peaks at 786 ev and 803.2 ev. In addition, 778.7 ev (Co 2p3/2) and 794.2 ev (Co 2p1/2) are the two peaks shown by Co3+, and 782.5 ev (Co 2p3/2) and 798 ev (Co 2p1/2) are the two peaks shown by Co2+ [43].
Figure 4 shows the morphologies of Co-MOF/GO, NiCo-LDH/GO and NiCo2S4/20rGO by scanning electron microscopy. Figure 4(a) shows how large or small, regular dodecahedral Co-MOF nanomaterials are tightly attached to sheets of graphene oxide with surface folds. Figure 4(b) shows that hollow nanospheres (NiCo-LDH) with a surface full of folds after Ni2+ hydrolytic etching are well-grown on the surface of flake graphene oxide. Figure 4(c) and Fig. 4(d) are the morphologies of NiCo2S4/20rGO at different magnifications. From Fig. 4(d), we can see that NiCo2S4 is well grown on and around the surface of redoxed graphene in a more macroscopic way, which indicates that the composite effect of the two materials is successful. From Fig. 4(c), we can more clearly and carefully find the scattered distribution of NiCo2S4 particles on the surface of redox graphene. From the image, we can also find that due to high-temperature vulcanization, NiCo2S4 particles of different sizes and NiCo2S4 particles with any hollow structure are produced. This structure also contributes to good electrolyte penetration, thus improving material properties.
Figure 5 shows the morphological structure of NiCo2S4/20rGO by transmission electron microscope. From TEM, we can learn more about the structure of the material. Figure 5(a,b) both show flecked rGO and NiCo2S4 nanoparticles growing around rGO. However, due to the large thickness of the sheet rGO in the figure, the NiCo2S4 nanoparticles growing on its surface cannot be projected. In general, the transmission results were consistent with SEM. Figure 5(c) is the selected electron diffraction of NiCo2S4/20rGO, whose bright diffraction rings show the polycrystalline properties of the material. Figure 5 (d) shows the lattice fringes of the material. The spacing of three groups of lattice fringes of the material is 0.17 nm, 0.27 nm and 0.3 nm, corresponding to the crystal faces (311), (511) and (440), respectively. The results shown in the images are fully combined with their XRD. Figure 5(e) is a TEM image of a NiCo2S4/20rGO selected specifically, corresponding to an element map of the material. Figure 5(f-i) is an element mapping of NiCo2S4/20rGO, corresponding to S, C, Co, and Ni elements respectively. The element composition here also fully corresponds to the results of sample characterization, which further explains the high purity of NiCo2S4/20rGO nanocomposites.
In order to study the electrochemical properties of the material, we assembled the material in a three-electrode system, using 3 M KOH as the electrolyte, and investigated its CV, GCD, EIS and other related properties. Figure 6 (a) shows the CV curves of NiCo2S4 and three NiCo2S4/rGO composites at a scanning rate of 50 mv s− 1 and a voltage window of -0.2-0.7 V. From the figure, we can find that the REDOX peak of each material is obvious, which is a typical characteristic of pseudocapacitive materials. In addition, all materials have large voltage Windows, among which NiCo2S4/20rGO has the largest CV curve area. This also shows that NiCo2S4/20rGO has the best electrochemical performance among composites and has a strong charge storage capacity. Figure 6 (b) is the CV curve of NiCo2S4 material at a window of -0.2-0.7 V and scanning rate from 5–50 mv s− 1. It can be seen from the figure that with the increase in scanning rate, the oxidation peak and reduction peak move towards the correct and more negative potential respectively. This is due to the polarization reaction as the scanning rate increases. Figure 6 (c) shows that each material has a distinct charge-discharge platform, which corresponds exactly to the REDOX peak of the CV curve. In addition, GCD data can be obtained, the capacities of NiCo2S4, NiCo2S4/10rGO, NiCo2S4/20rGO and NiCo2S4/30rGO are 1843 F g− 1, 2086 F g− 1, 2452.65 F g− 1 and 2187 F g− 1 at the same voltage window and 1 A g− 1 current density, respectively. Figure 6 (d) shows NiCo2S4 at A voltage window of 0-0.4 V, from 1 A g− 1, 2 A g− 1, 3 A g− 1, 5 A g− 1, and 10 A g− 1 current densities. Its capacities are 2452.65 F g− 1, 2011.86 F g− 1, 1775.95 F g− 1, 1532.5 F g− 1 and 1246.93 F g− 1, respectively. Figure 6(e) shows that the capacity retention rates of NiCo2S4, NiCo2S4/10rGO, NiCo2S4/20rGO and NiCo2S4/20rGO are 50.8%, 46.8%, 50.8% and 69.5%, respectively, at the current density of 1 A g− 1-10 A g− 1 for four materials. It can be found from the data that the overall power retention of the material is ok, and the power of the NiCo2S4/20rGO material with the best capacity needs to be improved. Figure 6(f) depicts the material retention rate of 73.2% after 5000 cycles of NiCo2S4/20rGO at a high current density of 10 A g− 1. As the number of cycles increases, its retention rate decreases, possibly due to the loss of electrode material. Figure 6(g) depicts the original impedance and fitted impedance of NiCo2S4 monomers and NiCo2S4/20rGO. The middle illustration is the equivalent circuit diagram at fitting. Rs = 0.51 and Rct = 0.21 of NiCo2S4 were obtained by fitting impedance. Rs = 0.35 and Rct = 0.15 for NiCo2S4/20rGO. In contrast, we can see that for monomers, composites have smaller semicircles in the high-frequency region and higher slopes in the low-frequency region. This also shows that NiCo2S4 has low charge transfer resistance and stronger ion diffusion ability after combining rGO. Figure 6(h) is the logarithm of the scan rate and peak current of the CV curve of NiCo2S4/20rGO at three electrodes. Through fitting, the b value of the anode is 0.54 and that of the cathode is 0.6, which indicates that the material is mainly controlled by the surface capacitance behavior in the process of charge storage. Figure 6 (i) further describes the relationship between capacitance contribution and scan rate. As can be seen from the figure, the diffusion control behavior decreases with the increase of the scanning rate.
Figure 7(a) is a hybrid supercapacitor composed of NiCo2S4/20rGO material as a positive electrode and AC as a negative electrode. The purpose is to study the practical application of the device. According to formula (1), the active mass of the positive electrode material is 2 mg, and that of the negative electrode material is 5.8 mg. Figure 7(b) shows the CV curves of AC and NiCo2S4/20rGO at a sweep speed of 50 mv s− 1 in a three-electrode system. As can be seen from the figure, the voltage window of AC is -1-0 V, and the voltage window of NiCo2S4/20rGO is -0.2-0.7 V. Figure 7(c) shows CV curves of the NiCo2S4/20rGO//AC device at different voltage Windows at 50 mv s− 1 sweep speed. When the voltage window is 0-1.4 V, it can be seen from the image that the material does not undergo a polarization reaction. When the voltage window is 0-1.8 V, the corresponding CV image is obviously deformed. When the window is 0-1.6 V, it is the best suitable window for the HSC device. In Fig. 7(d), it can be seen that the CV area gradually increases during the scanning rate from 5–50 mv s− 1, but the image shape remains basically unchanged. This indicates that NiCo2S4/20rGO//AC devices have stable charge transfer and good capacitance characteristics. Figure 7 (e) records the specific capacity of the HSC device from 1 A g− 1-10 A g− 1. It can also be seen in the figure that the five groups of graphs are highly approximate, which also reflects the high reversibility of the electrochemical reaction process of the material. Figure 7(f) shows the specific capacities of NiCo2S4/20rGO//AC devices at current densities of 1 A g− 1-10 A g− 1 corresponding to 160 F g− 1, 120 F g− 1, 106 F g− 1, 92 F g− 1, and 73 F g− 1, respectively. It can also be seen from the magnification curve that the material has a good capacity retention rate. Figure 7(g) records that the device achieves an excellent power density of 799 W kg− 1 at an energy density of 56.9 Wh kg− 1, and an excellent power density of 7983 W kg− 1 at an energy density of 26.1 Wh kg− 1. Table 1 corresponding to Fig. 7(g) more intuitively shows the excellent properties of this work compared to other transition metal sulfides. Figure 7(h) reflects the material's nearly 100% coulomb efficiency and 74% capacity retention after 10,000 cycles at a high current density of 10 A g− 1. This fully demonstrates the excellent cyclic properties and research prospects of the material.
Table 1
Energy density comparison of transition metal sulfides previously reported with this work
Materials | Energy density (Wh kg− 1) | Power density (W kg− 1) | Ref. |
NiS//AC | 38 | 1500 | [44] |
NiCo2S4@GO//AC | 26.9 | 658 | [45] |
NiS2/CoS2/NC-500//AC | 53.93 | 800 | [46] |
RGO/ NiCo2S4// RGO | 40.3 | 375 | [47] |
NiCo2S4//AC | 39.3 | 749.6 | [48] |
NiCo2S4/CC//CNF | 41.28 | 1564 | [49] |
NiS/rGO//IHPC | 56.1 | 880 | [50] |
NiCo2S4/20rGO//AC | 56.9 | 799 | This work |