Manufacturing and the synthesis of (CdTe)x: (S)1-x/PSi by laser-induced plasma technology

doi:10.21203/rs.3.rs-3982158/v1

In this work, the porous silicon (PS) layers were prepared with the electrochemical etching technique of the n-type silicon with the resistance (3.2 µm) in the hydrofluoric acid (HF) at a concentration of (1 ml )with the current density of (25 mA/cm²) with a (20) minute etching time. The morphological advantages (AFM) and the electrical properties of J-V were studied. The atomic force microscopy investigation displays the rough silicon surface, with the etching process (etching time) porous structure nucleates which leads to an increase in the depth and the average diameter (34.12 nm). Consequently, the surface roughness also increases. The electrical properties of produce PS; namely current density-voltage characteristics, show that Porous silicon has a sponge-like structure and the pore diameter is increased with etching current density which leads to an increase in the efficiency of Solar cell devices. This behavior was attributed to the increase in the depletion zone width which led to the increase in built-in potential.

Laser induced breakdown spectroscopy (LIBS)

Solar cell (SC)

sulfur (S)

cadmium telluride (CdTe)

Porous Silicon (PS)

Photo-Electrochemical Etching (PECE)

Thin-film solar cells using cadmium telluride have become recognized as one of the most photovoltaic and most competitive technologies due mainly to the increase in current photovoltaic density [1–4]. Cadmium telluride (CdTe) is a composite semiconductor II-VI that is suitable for the production of thin film solar cells with an optical energy gab (1.44 eV) and a high visible range absorption coefficient (> 105 cm^− 1) [5–8].

Porous silicon (PS) produces a very high surface matrix with programmable and recyclable properties [9–11]. Silicon nanowire (SiNWs) can target the same kind. However, porous silicon and (SiNWs) have numerous challenges, such as electrode materials, such as chemical stability, relatively high electrical resistance and poorly developed friction [12–14]. It is known that coating or doping of Si structures is an attractive method for reducing electrical resistance and increasing stability [15–17].

Due to the special properties of porous silicone (PSi), such as a specific surface area, a high oxidation / reduction tendency, and the applicability of the surface of the earth, the suitable substrate for decoration of metal nanoparticles has been selected [18–20]. PSi is a porous medium that can easily be created by chemical silicon etching in a HF solution [21, 22]. PSi has many applications in chemical sensors and biosensors.[23]

The standard description of solar cells involves determining the typical DC voltage under various intensities of white light illumination and the measurement of the photocurrent in monochromatic light of low-intensity [24–26]. When.the system isein the bright state, two values can easily be determined empirically: the electrical reaction of the vertical axis and the horizontal axis related to (Jsc), or short circuit current, and (V_OC), or open circuit voltage [27–29]. The full I-V curve can be seen in Fig. 1. The analysis of the photovoltaic current - the voltage curve involves the determination of the following parameters:

Figure (1): Plotting a solar cell's typical J-V curve using current density

The cell current determined at an applied voltage of zero volts is known as the short-circuit current (Jsc) [30].

Potential open-circuit (VOC): When the cell's current is zero, the cell potential is measured proportionate to almost flat conduction and valence bands [31].

The power output of the cell resulting from the measured cell current and voltage represents P(V) = I•U, the maximum power output (Pmax) and Umax are the The coordinates of the maximum energy inside the curve P(V) [32, 33]. Visually, the area of the large rectangle that fits inside the current-voltage curve represents extreme power.

Fill factor (FF) is the result of dividing the maximum power (Pmax) of a solar cell per unit area by the product of V_oc and J_sc. [34], as in:

$$FF=\frac{{P}_{max}}{{V}_{OC}{I}_{SC}}$$

1

………………..

The fill factor has a range of possible values from 0 to less than 1.

The Efficiency (η) report the performance of the solar cell and is measured by the photocurrent density measurable at the photovoltaic voltage open-circuit (Voc), the cell's fill factor (FF), the short-circuit voltage (Jsc), and the incoming light intensity (Pin) [35, 36].

$$\eta =\frac{{P}_{out}}{{P}_{in}} =\frac{{P}_{m}\left({V}_{m}{I}_{m}\right)}{{P}_{in}}$$

2

……………..

The n-type silicon wafer is rinsed with ethanol to clean the surface of any contamination after being rinsed with HF acid to remove the original oxide and dry it in the air. A thin layer of aluminum is deposited on the back side of the Si chip to create ohmic contact. Absolute ethanol was used (Scharlau Co., C2H5OH, 50% purity) to reduce the concentration of HF by (50%). Thus, the percentage of hydrogen bubbles decreases during the etching with a percentage (1:1) HF: ethanol.

The Si surface was lit using a 50 mW diode laser at a wavelength of 650 nm. After calibration, laser power was measured using a (Genetic-EO SOLO2) power meter. The laser beam was expanded using the beam expander to illuminate all of the Si etching sites The photoelectrochemical etching experiment setup for generated PS samples is shown in Figure (2). The bottom of the Teflon-made PECE cell was attached to a stainless steel disk for contact reasons. The silicon wafer was then positioned, and before putting the upper portion—which has a center circle of one centimeter—the rubber O-ring was utilized to allow the silicon wafer to come into contact with the electrolyte solution.

To apply current across the cell, two electrodes were used: one was a platinum mesh electrode submerged in the HF solution, and the other was a stainless steel disk located beneath the silicon wafer. The digital ammeter (Uni-T), laser diode-illuminated Si Surface, and DC regulated power supply (QJ3005XII) completed the electrical circuit.

For (20) min, the PECE process was run with a constant HF: ethanol concentration (2 ml) and current density (25 mA/cm²). Following the etching procedure, pentane was used to rinse the PS sample, as seen in Fig. (3), and air was used to dry it.

An Nd:YAG laser set at λ = 1064 nm was used to manufacture the devices from CdTe:S with various parentage under vacuum (P = 2.5 * 10-2 mbar) using a laser-induced plasma setup, as seen in Fig. (4).

Following the manufacture of the devices, we vaporize aluminum on both sides of the device to improve conductivity. Figure (5) illustrates the layer structure for solar cell devices.

3.1 Properties of Porous Silicon (PS)

3.1.1 Morphological Properties of PS

The surface morphology of the PS was evaluated using AFM. The surface-level morphology is strongly dependent on production conditions. Therefore, when all other variables are constant, the current density is the main parameter of the porosity of the PS layer.

Morphological characteristics of the PS specimen, current density (25 mA / cm2) and 1 ml (HF: ethanol) for 20 minutes, as shown in Fig. 6. Among them, the PS layer has the same structure as a sponge.

Perforations are present throughout the whole etched surface. The etching parameters that impact surface characterization are responsible for the pores that cause an increase in surface roughness.

3.1.2 Electric Properties of PS

3.1.2.1. Current density – voltage characteristics

Figures (7),(8),(9),(10),(11) and (12) shows the current density-Voltage (J-V) characteristics for CdTe and (CdTe)_x(S)_1−x at (X = 0.1 ,0.3 ,0.5) with PS prepared at J = 25 mA / cm² for 20 minutes.

Applying current density (+ 15 to -35) mA/cm² yields the J-V curve, which quantifies the output current. As a function of load resistance, the connection between J and V may be identified in figures (7), (8), (9), (10), and (11). Al/n-Si/PS/CdTe/Al,Al/n-Si/PS/CdTe:S/Al efficiency at X= (0.1, 0.3 and 0.5)} devices have been measured in at pulsed = 100, Nd-Yag laser (λ = 1064 nm) with the energy 600 mJ under Vacuum with P = 2.5 x 10^− 2 mbar. It value found in Table (1) .

Table (1) : the values of efficiency for CdTe _X:S_1-x solar cells at X=(0.1,0.3 and 0.5)

Element	V_max (volt)	I_max (mA)	V_{max *} I_max	Efficiency
CdTe	0.21	12.2	2.56	0.025
CdTe:S X = 0.1	0.219	17.1	3.74	0.037
CdTe:S X = 0.3	0.24	20	4.80	0.048
CdTe:S X = 0.5	0.26	26	5.35	0.06

The light rays reflected from one side within the key hall surface are responsible for the increased value of Quantum efficiency (QE) following irradiation situations just to strike another, resulting in less reflection compared to the crystalline silicon surface and a higher likelihood of absorption. From Figure (12) we can observe that the increase of Efficiency with increased the value of X. [37, 38].

All properties of the deposited PS CdTe:S:Pb/n-Si were measured by PLD. It was found that the level of surface layer morphology depends greatly on the production conditions. Doping is another parameter that can control or improve the conductivity of the PS-doped porous silicon layer which is doped with S and has lower electrical resistance.

The created PS layer's microscopic and structural characteristics, as well as its photovoltaic qualities of Al/n-Si/PS/CdTe:S/Al solar cells were studied. The density of the porous silicon boosts the solar cell device's efficiency, while the porous silicon has a sponge-like structure and its pores' diameter grows with the etching current.

Author Contribution

All authors contributed to this work, such as Abdulrhman. H. Shaker and Kadhim A. Aadim produced the idea and method of work, and Abdulrhman conducted the practical application, calculations, and results. Riyam N. Muhsen and Abdulrhman worked on writing the theoretical part, and the authors all contributed to writing the summary and conclusion.

Acknowledgment

We would like to express our gratitude and thanks to the plasma laboratory in the Physics Department, College of Science, University of Baghdad.

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No competing interests reported.

Manufacturing and the synthesis of (CdTe)x: (S)1-x/PSi by laser-induced plasma technology

Status:

Version 1

Abstract

Figures

1-Introdution

2- Experimental Method

3- Results and discussion

3.1 Properties of Porous Silicon (PS)

3.1.1 Morphological Properties of PS

3.1.2 Electric Properties of PS

3.1.2.1. Current density – voltage characteristics

4-Conclusions

Declarations

Author Contribution

Acknowledgment

References

Additional Declarations

Status:

Version 1