Molecular design and intrinsic stability analysis
Fig.1a presents the structure of the target molecules, all derived from our previously reported multiple donors-acceptor charge-transfer-type TADF molecule, 2,3,4,5,6-penta(9H-carbazol-9-yl)benzonitrile (5CzBN).16 The CzBNs have been demonstrated as one of the most promising families of stable TADF emitters and continuous works have been devoted to modifying the molecule structure and achieve cutting-edge device stabilities in literature.28,29 For instance, Adachi et al. established a hetero-donor strategy to modify 5CzBN by using carbazole derivatives with slightly different locally-excited (LE) triplet states to enhance the RISC process, as exampled by 3Cz2DPhCzBN, realizing a marked improvement in device operational stability.30,31 However, though their precedence regarding device stability at present, the reported CzBNs still suffer from a relatively large ΔEST of > 0.1 eV, resulting in a moderate RISC rate in the range of 105 s-1. Moreover, despite numerous efforts to modify donor units, few attempts have been made to stabilize the BDE(-)s of CzBN compounds, which limits the further improvement of device performances. With this consideration in mind, we proposed a new design rule for CzBNs, that is introducing an auxiliary acceptor group at the para-position of CN units to delocalize the electron distributions. Such a concept could well establish, on one hand, a more delocalized distribution of the lowest unoccupied molecular orbital (LUMO), which favors reducing the ΔEST value while maintaining a large oscillator strength (f). On the other hand, the more dispersed negative charge distribution will naturally reduce the electron density of the central benzene unit and thus favor reducing the chemical reaction activity of the molecule. Regarding the auxiliary acceptor group, benzonitrile (PhCN) and 2,4,6-triphenyl-1,3,5-triazine (TPTRZ) groups were chosen as they were the only ones that had displayed acceptable stability as acceptors in TADF molecules. Three target molecules, namely 4CzBN-PhCN, 4tCzBN-PhCN, and 4tCzBN-TPTRZ were thereafter constructed. It should be mentioned that such molecular design was expected to exert a limited impact on the emission color compared with 5CzBN as both PhCN and TPTRZ are weaker in the electron-deficit ability than the CN group and the number of the donor groups is reduced meanwhile.
Firstly, we studied the distributions of the frontier molecular orbitals for these compounds. Unlike their similar highest occupied molecular orbital (HOMO) distributions, which are mainly on the multi-carbazole units, clear differences in the LUMO distributions are observed between the target and reference compounds, as illustrated in Supplementary Fig.3.As expected, the LUMOs of the target molecules extend to the auxiliary acceptor segment, being more delocalized than that of the reference compound, where the LUMO is solely located on the PhCN group. The BDEs of the C-N bonds in the target compounds are calculated and summarized in Fig.1b and Supplementary Table 2 with 3Cz2DPhCzBN as the reference. All target compounds show improved BDE(-) values of 3.04, 3.24, and 3.19 eV for 4CzBN-PhCN, 4tCzBN-PhCN, and 4tCzBN-TPTRZ, respectively, compared with that of 3Cz2DPhCzBN, which is 2.75 eV. The enhanced BDE(-) can be attributed to the increased electron affinity of the molecule. According to Hess’s law, BDE(-)=BDE(n)+EAm-EAx, where EAm and EAx represent the electron affinity of the radical anion after dissociation and the intact molecule, respectively.26 Introducing secondary acceptor groups would not only enhance electron-withdrawing ability but also extend the conjugation length, favoring the enlargement of EAm and ultimately resulting in a large BDE(-).
Furthermore, we experimentally evaluated the photoluminescent (PL) stabilities of these materials in pristine thin films (thickness of 100 nm) using ultra-violet (UV) irradiation with an emission peak of 360 nm and a power density of about 1 mW cm-2. As illustrated in Fig.1c and Supplementary Fig. 4, 4CzBN-PhCN and 4tCzBN-PhCN remained almost unchanged during the measurement, exhibiting excellent molecular intrinsic stability, followed by 4tCzBN-TPTRZ. In contrast, 3Cz2DPhCzBN shows the worst result. Under UV excitation, these molecules are in the neutral states, which are considered to be biradical states, namely a radical cation and a radical anion couple.32 In the CT excited state, the donor loses an electron to form a radical cation (D+) while the acceptor acquires an electron to form a radical anion (A-). The stability of radical species should be similar to the corresponding polarons, and thus, the good durations of A- should matter more than those of D+ in determining the overall molecular stability. Referring to the results from theoretical predictions, the better photo-aging behaviors of the target molecules should be attributed to the better long-term stable A- species compared to the references. Besides, the large electron delocalization ranges in the target molecules will also lower the nucleophilicity of A-, preventing further radical addition reactions and the formation of degradation products, even if radical segments are formed.
The stability of these molecules in positive and negative states can be experimentally demonstrated under electrical excitation using hole- and electron-only devices (HODs/ EODs) with device structures of ITO/ HATCN (5 nm)/ NPB (30 nm)/ EML (30 nm)/ HATCN (5 nm)/ Al and ITO/ Cs2CO3 (1 nm)/ DPPyA (30 nm)/ EML (30 nm)/ DPPyA (30 nm)/ LiF (0.5 nm)/ Al, respectively. Here, HATCN stands for 1,4,5,8,9,11-hexaazatriphenylenehexacabonitrile, NPB stands for N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diaminem, and DPPyA stands for 9,10-Bis(6-phenylpyridin-3-yl) anthracene. The carrier-only devices were aged under the operating conditions of current stress with a constant current density of 20 mA cm-2 and the voltage changes were recorded. Previous works have pointed out that under electrical stress, the molecular degradation products will act as the fixed charge sites to repulse the vicinal charge and thus yield a voltage rise.33–35 According to Fig. 1d-e, the voltages of EODs of all the samples rise faster than their HODs, indicating relatively better stability of the molecules in cationic states than in anionic states, which is in agreement with the theoretical results. More importantly, the EODs of 4CzBN-PhCN, 4tCzBN-PhCN, and 4tCzBN-TPTRZ exhibited only inconspicuous voltage rise, but the voltage rise of the EOD of 3Cz2DPhCzBN is much more evident. It can thus be reasonably concluded that the target molecules exhibit better chemical stabilities in anionic states than the reference.
Photophysical analysis
The photophysical properties of these compounds are studied in dilute toluene solutions (10-5 M). Fig.2a shows the UV-Vis absorption and the PL spectra of these compounds. All of them exhibit similar absorption peaks around 290 nm and 340 nm that arise from the π-π* or n-π* transition of carbazole moieties. Broad bands with wavelengths above 400 nm are also recorded, arising from the CT transitions. Among them, 4tCzBN-PhCN exhibits the strongest absorption intensity, suggesting its largest f value of the S0-S1 transition. PL spectra of these emitters show emission maxima at 497 nm for 4tCzBN-PhCN, 492 nm for 4tCzBN-TPTRZ, and 486 nm for 4CzBN-PhCN. From the onset of these fluorescence spectra, similar S1 energies in the range of 2.72-2.84 eV are thereafter obtained, rationalizing the direct comparison of their stabilities. The phosphorescent spectra of these compounds are also recorded under 77 K with a 10 ms delay, as illustrated in Supplementary Fig. 5, obtaining triplet energies of 2.63-2.76 eV. Small ΔESTs< 0.05 eV are calculated for the target compounds while it is 0.21 eV for 3Cz2DPhCzBN. As mentioned earlier, reducing ΔEST is a challenge for CzBN molecules by only modulating donors, restricting the further improvement of the RISC rate. Our work here validates that extending acceptor groups is a more feasible and effective approach to minimize ΔEST.The photoluminescence quantum yields (PLQYs) of these compounds in toluene are measured to be 0.12-0.15 before degassing and can be improved to near unity after bubbling nitrogen.
The transient PL decay curves of these emitters are further recorded at an excitation wavelength of 360 nm, and clear bi-exponential decay characteristics are observed, as shown in Fig. 2b. Compared with 3Cz2DPhCzBN, whose delayed lifetime (τD) is 9.6 μs, all three target compounds exhibited obvious shorter τDs of <6.5 μs, especially for 4tCzBN-PhCN (2.4 μs). To reveal the origin of their rapid exciton consumption, the rate constants of TADF processes are calculated and presented in Table 1. Of particular note, compared with the reference, the three target molecules exhibited both higher rate constants of radiative decay (kr) and RISC (kRISCs), with krs over 107 s-1 and kRISCs over 106 s-1, which should account for their relatively shorter-lived delayed components. The balanced krs and kRISCs of the target molecules should benefit from the molecular design as the more delocalized LUMO distributions could reduce the ΔEST and increase the transition dipole moment for a larger f value compared with the reference. The maintained multiple-donors structures also favor a densemanifold of triplet states with hybrid CT and LE characters, as confirmed by hole-electron analysis (Supplementary Fig.6) and the large coefficients of the spin-orbital coupling (λSOCs) between T2 and S1 are obtained to be 0.73, 0.71 and 0.66 cm-1 for 4CzBN-PhCN, 4tCzBN-PhCN and 4tCzBN-TPTRZ, respectively, greatly promoting spin-flip transitions without sacrificing the singlet radiative decays. As mentioned above, rapid exciton consumption is beneficial to prolong the operational stability of OLEDs. Therefore, besides thermodynamically stabilizing the molecules in both excited and negative polaron states, introducing auxiliary acceptors also kinetically favors enhancing molecular stability by balancing singlet radiation and triplet up-conversion to prevent exciton quenching.
Device analysis
OLEDs of these molecules as TADF emitters are fabricated with the following architectures: ITO/ HATCN (5 nm)/ NPB (30 nm)/ SiCzCz (10 nm)/ SiCzCz: SiTrzCz2: TADF emitter (24 nm, 0.48: 0.32: 0.20 w/w/w)/ SiTrzCz2 (5 nm)/ DPPyA: Liq (30 nm, 1:1 ) / LiF (0.5 nm)/ Al (150 nm). The materials used in device fabrication are presented in Supplementary Fig. 7. A proved stable exciplex-forming system consisting of 9-(3-(triphenylsilyl)phenyl)-9H-3,9′-bicarbazole (SiCzCz) and 9,9′-(6-(3-(triphenylsilyl)phenyl)-1,3,5-triazine-2,4-diyl)bis(9H-carbazole) (SiTrzCz2) was adopted for stability evaluation.1 Pristine SiCzCz and SiTrzCz2 films are inserted between transporting layers and emitting layer (EML), to confine charge recombination within the EML.The energy level diagram and the device properties are shown in Fig.3 and summarized in Table 2. The doping concentration of the TADF emitters is optimized to be 20 wt%, as shown in Supplementary Fig. 8-10. Electroluminescent (EL) spectra of these devices at a luminance of 1,000 cd m-2 are provided in Fig. 3b. Similar to the PL results, emission peaks in the range of 489-501 nm are obtained. The EL spectra of 4CzBN-PhCN and 3Cz2DPhCzBN-based devices are almost the same, as are those of 4tCzBN-PhCN and 4tCzBN-TPTRZ-based devices, which makes it reasonable to compare the stabilities of the molecules. The external quantum efficiency (EQE)-luminance characteristics are depicted in Fig.3c. All devices exhibited high maximum EQE values ranging from 25.9% to 37.1%. To confirm the origin of the high efficiencies, we further characterize the angle-dependent PL intensities of the p-polarized light emitted from the 30 nm-thick EMLs to study the emitting dipole orientation (EDO) of these emitters. As illustrated in Fig.3d and Supplementary Fig.11, they show relatively high ratios of the horizontal EDO (Ө//s) in the range of 77.5% to 82%, which would lead to high outcoupling efficiencies of devices and therefore high EQEs.36–39
Next, we assessed the operational stability of these devices at an initial luminance of 5,000 cd m-2 under a constant current density, as shown in Fig. 3e. Long LT95s of 26.7, 37.6, and 16.4 h are measured for devices based on 4CzBN-PhCN, 4tCzBN-PhCN, and 4tCzBN-TPTRZ, respectively, all longer than the LT95 (only 6.9 h) of the device based on 3Cz2DPhCzBN. The transient EL decay curves of those devices are taken at a luminance of 1,000 cd m-2 as shown in Fig.3f. Devices based on the target molecules of 4CzBN-PhCN, 4tCzBN-PhCN and 4tCzBN-TPTRZ all show relatively faster decay curves, compared with that of the reference, similar to the trend observed for the transient PL decays. 4tCzBN-PhCN exhibited the best operational stability due to its combination of a stable molecular structure and fast exciton consumption. Noteworthily, lifetime of the OLED based on 4tCzBN-TPTRZ is shorter than the 4CzBN-PhCN one, despite the similarity in BDE values and rates of photophysical processes between 4tCzBN-TPTRZ and 4CzBN-PhCN. It was speculated that the stability of the auxiliary acceptors would also affect the stability of the TADF emitters. To validate this, we selected a reported stable molecule 5Cz-TRZ as a comparison with the structure shown in Supplementary Fig. 12, which possessed also multi-carbazole donors while only a triazine acceptor.18 The photophysical and device characterizations of 5Cz-TRZ are shown in Supplementary Fig. 13-14. 5Cz-TRZ shows a large BDE(-) value of 3.14 eV of C-N bond, rapid exciton consumption with a delayed lifetime of 2.2 μs and a kRISC of 1.42×107 s-1. However, the OLED based on 5Cz-TRZ shows an even shorter lifetime than the 4tCzBN-TPTRZ-based one, using the same device structure. Previous works have also theoretically predicted that the triazine group would undergo a ring fission process in the excited state, making them undesirable in the EML.40 Therefore, the cyano group would be better than triazine in constructing stable TADF emitters.
Due to the superior performances of 4CzBN-PhCN and 4tCzBN-PhCN, we further evaluated their effectiveness as sensitizers for a deep blue MR emitter t-BuCz-DABNA.41 The devices are noted as TSF-DB and TSF-SB for those using 4CzBN-PhCN and 4tCzBN-PhCN as sensitizers, respectively. It is interesting to note that, though t-BuCz-DABNA possesses a blue-shifted emission peak compared with both sensitizers, large overlaps were observed between the sensitizers’ emission and the emitter’s absorption spectra as illustrated in Supplementary Fig.15. The Förster energy transfer from 4CzBN-PhCN and 4tCzBN-PhCN to t-BuCz-DABNA shows large radii (R0) of 3.59 and 3.06 nm, respectively. This is reasonable as recent work has demonstrated that sensitizers with a larger 0-0 band than that of the final emitter could guarantee efficient energy transfer.42 As depicted in Fig.4a, sharp blue emission spectra peaking at 470 nm were obtained from both devices with small full widths at half maximum (FWHMs) of merely 18 and 21 nm for TSF-DB and TSF-SB, corresponding to Commission Internationale de l'Eclairage (CIE) coordinates of (0.14, 0.17) and (0.16, 0.27). Compared with sensitizers, both TSF devices show much blue-shifted emission, mainly arising from the narrowband spectra of the final emitter. Different from TSF-DB, which shows a deep-blue emission, TSF-SB shows a sky-blue emission owing to the incomplete energy transfer, reflected by the tail at the long wavelength region. This phenomenon has also been observed in previous works and the emission tail could be effectively reduced in top-emitting devices, taking advantage of the microcavity effect.9,11,12 Fig.4b provides the EQE-luminance characteristics and high EQEmax values of 30.8% and 27.8% are attained for TSF-DB and TSF-SB, which remain 26.3% and 24.2% at 1,000 cd/m2 and 20.0% and 19.4% at 5,000 cd/m2, respectively. Both devices are measured to exhibit a Lambertian distribution as shown in Supplementary Fig.16, ensuring that the EQE values are not overestimated.
We tested the stability of the blue OLEDs and remarkable LT95s of 221 and 454 h were obtained for TSF-DB and TSF-SB at an initial luminance of 1,000 cd m-2 as provided in Fig.4c. To the best of our knowledge, TSF-SB is one of the most stable blue devices ever reported among OLEDs with EQE of 20% and CIEy < 0.3 as summarized in Fig. 4d. Particularly, TSF-DB even outperforms the recently reported stabledeep-blue phosphorescent OLEDs based on Platinum (Pt) complex with an EQEmax of 25.4%, an LT95 of 150 h and CIE coordinates of (0.141, 0.197).1 Recently, our group reported a stable blue TSF device with an LT95 of 189 h and CIE coordinates of (0.15, 0.20) by using a perdeuterated sensitizer.21 TSB-DB here showed not only a longer LT95 but also a smaller CIEy value. It is believed that the performances of the TADF emitters here can be further enhanced by perdeuteration. We also noticed that Kyulux claimed at SID Display week 2022 that blue devices with LT95 of about 450 h with CIEy of 0.09 have been obtained. However, the details of the materials they adopted were not published and those results were obtained from top-emitting devices, different from our bottom-emitting ones.