Color center platforms have been at the forefront of quantum nanophotonics forapplications in quantum networking, computing, and sensing. However, large-scaledeployment of this technology has been stifled by a lack of ability to integrate photonicdevices at scale while maintaining the properties of quantum emitters. We address thischallenge in silicon carbide which has both commercially available wafer-scale substratesand is a host to color centers with desirable optical and spin properties. Using ionbeam etching at an angle, we develop a 5-inch wafer process for the fabrication oftriangular cross-section photonic devices in bulk 4H-SiC. The developed process has avariability in etch rate and etch angle of 5.4% and 2.9%, respectively. Furthermore, theintegrated color centers maintain their optical properties after the etch, thus achievingthe nanofabrication goal of wafer-scale nanofabrication in quantum-grade silicon carbide.