Wideband Near-Infrared Absorber with high manufacturing tolerance utilizing MXene Metasurface for industrial thermal applications

doi:10.21203/rs.3.rs-4991208/v1

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Wideband Near-Infrared Absorber with high manufacturing tolerance utilizing MXene Metasurface for industrial thermal applications

https://doi.org/10.21203/rs.3.rs-4991208/v1

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This study presents a polarization-insensitive, wideband solar absorber and thermal emitter made of plus-shaped fractal MXene metasurface. The proposed structure shows a high average absorption rate and photon-to-thermal energy conversion efficiency of above 90% from 750 to 3300 nm. The result findings reveal that wideband high absorption and excellent photothermal conversion efficiency is a result of localized surface plasmon resonance (LSPR) exists within the design structure. Besides that, the proposed structure also shows incident wave angular stability over the wide angular range up to 60⁰. Moreover, the proposed structure shows high manufacturing tolerance when different parameters of unit cell design varies up to ± 10–15%. The understanding of high absorption characteristics is explored by surface electric field at various operating wavelengths. The proposed wideband absorption would be useful for energy harvesting applications, thermophotovoltaic, high power electronics devices, and infrared imaging.

Absorber

Fractal geometry

MXene

Thermal emitter

Wideband

Over the years, metamaterials (MMs) have gained the attention of researchers due to their excellent features that make them useful for several modern applications such as filtering, imaging, absorber, imaging, and sensing, etc. that operate in different frequency regions starting from the microwave to optical and beyond [1–3]. Absorption is one of the properties of MM-based devices called absorbers. So far, several research studies present MM-based absorbers with distinctive features such as high absorption, small size, filtering capabilities, etc., and operate in different frequency bands [4–7]. In this regard, researchers in this area have been working to improve the following characteristics: absorption, tuneability, and small size of metasurface unit cell, etc [8–12]. A simple structure of the MM-absorber comprises a stack of multilayers made of the combination of metal-dielectric-metal and a periodic pattern to achieve high absorption under the plasmonic resonance condition when light falls upon the metasurface. Typically, most MM-based absorbers designs operate for a single band [13–16]. The number of published works also shows the operation of MM-based absorbers in more than one operating band [17–24]. From a future perspective, dual-band absorbers would be in high demand for different potential applications based on the sensing operation in the chemical and biological fields.

Recently, several state-of-the-art works about multi-band absorbers based on the plasmonic MMs that operate in visible, infrared, and even in the THz regions have been presented [25–31]. For example, the ref. [27] shows a nanostructure (Au-disks/SiO₂/Au-film) design of the absorber and its absorption bands works by exciting the localized and surface plasmonic resonances in their desired operating bands. Similarly, another work [28] shows the MM-absorber that consists of metal-insulator-metal coupling capability to support the plasmon resonances and can be used for color printing. Authors in ref. [29] present the dual-band MM-absorber that works in the THz band. The resonance phenomena in the THz band are due to the existence of an electric and a magnetic dipole.

The manufacturing perspective always demands low-cost materials when considering the design process. Within this context, some MM-based absorber designs contain noble metals such as nickel, gold, and tungsten [32–35]. These materials have the feature to operate in a very high-temperature environment and have a melting point of 1000°C and even more; that would show their potential for solar energy system-based applications. Recent research has shown that 2D transition metal MXene (Ti₃C₂T_x) consists of a combination of carbides and nitrides and has gained the great interest of the research community due to its silent features that include high tuneability and better efficiency in converting heat into light. Therefore, this material shows suitability for several modern applications [36–39]. Hence, MM-absorber made of MXene material can be useful in developing solar energy systems. The present research literature reveals that the study on MXene-based MM absorbers concerning plasmonics [40, 41] is limited in both theoretical [42, 43] and experiments [44, 45]. Besides that, the shape of the MM-based absorbers has significance in the design process. Among numerous reported designs [46–50], fractal geometry structure for MM-based absorbers is considered a promising platform for attaining wideband and multiband absorption. Most recent published works have been focused on achieving high absorption characteristics in a single operating band. Therefore, it is desirable to present the study of the optical absorber with dual-band operation that can be useful for modern applications. In addition, MXene is a newly explored material for use in the manufacturing of optical devices due to its several prominent features such as high tunability, large surface area, high absorption efficiency, availability in the powdered form, etc.

This study investigates the wideband MXene-based metasurface absorber and thermal emitter using etched fractal geometry resonators that operate in visible and infrared regimes of electromagnetic spectra. The unit cell design of the proposed device comprises MXene at top followed by a Ni metallic layer on a glass substrate of silicon dioxide (SiO₂) and nickel nanolayer of 100 nm thickness acts as a reflector to the striking light waves. The localized surface plasmon resonance (LSPR) effect and fractal structure of MXene produce absorption and, therefore, permit the light energy to keep inside the substrate, SiO₂. Furthermore, the proposed absorber features high absorption characteristics over the wideband (750 to 3300 nm) and high photothermal conversion efficiency within the near-infrared spectra and shows high manufacturing tolerance while evaluating the parametric analysis. Besides that, the proposed absorber shows angular stability, polarization-independent nature. Therefore, this device shows potential for several practical applications such as solar cells, photovoltaic systems, thermal imaging, and energy harvesting, etc.

Figure. 1 shows the geometry details of the proposed fractal-shaped wideband metasurface absorber (FSWMA). The top metasurface layer is etched plus shaped fractal resonators made of MXene, and has a thickness t₁. The middle layer contains nickel (Ni) with thickness t_N = 150 nm mounted on a silicon dioxide (SiO₂) substrate and has a thickness of t, and the reflected surface is made of nickel with a thickness of 100 nm. The formation of the proposed absorber unit cell comprises materials with high melting points; Ni and SiO₂ are 1453 ⁰C [51], 1414 ⁰C [52], respectively and MXene has thermal stability up to 600 ⁰C [53]. Moreover, Fig. 1(a) provides the detail of different dimensions of the unit cell and their values are given: P = 300 nm, C = 160 nm, l = 250 nm b = 50 nm, x = 60 nm, d = 45 nm, and e = 25 nm. The substrate thickness is represented by t = 320 nm, and t₂ = 100 nm represents the ground layer thickness. The dimension of the proposed unit cell is p×p = 300 × 300 nm². Figure. 1(b) shows the 3D view of the proposed unit cell and similarly, 3D view of the proposed structure panel is provided in Fig. 1 (c), respectively. Please note that we have used the dielectric constant value of the MXene that is reported in the reference [51].

The absorptivity of a metamaterial can be calculated from the given equation [48].

$$\:A=1-\left|{\Gamma\:}\right|-\left|T\right|$$

Where A, Γ and Τ represents the absorption, reflection, and transmission, respectively. Eq. (1) can also be defined in terms of S-parameters:

$$\:A=1-{\left|{S}_{11}\right|}^{2}-{\left|{S}_{21}\right|}^{2}.$$

The absorber is backed with perfect reflector; therefore, transmission is almost zero, $\:\left|{S}_{11}\right|$≈ 0. Hence, Eq. (2) can be further simplified as

$$\:A=1-{\left|{S}_{11}\right|}^{2}$$

Heat radiation efficiency $\:{\eta\:}_{E}$ is defined as

$\:{\eta\:}_{E}$ = $\:{\text{A}}_{avg}$ _– [5.67 × 10⁻⁸ × $\:\frac{{{\epsilon\:}}_{th}({T}^{4}-\:{T}_{ambient}^{4})}{C\times\:{I}_{s}}$] (4)

here $\:{\text{A}}_{avg}$, C, T, T_ambient, and I_s are representing aggregative absorption within the operating range, solar concentration factor, operating temperature in Kelvin, ambient temperature (273 K), and solar flux intensity, respectively.

In this section, we discuss the relationship of wavelength-dependent absorption of the proposed absorber. Using (3), Figure 2 (a) shows the absorption results of the proposed MXene fractal-shaped absorber when considering TE/TM mode of excitation. Whereas, using (4), temperature dependent photothermal efficiency is calculated and presented in the part (b) of Figure. 2. Here, we are representing MXene, having a thickness of 40 nm described in ref. [54]. For the absorption and photothermal conversion analysis, the operating wavelength is considered from 750 to 3300 nm. It is clearly observed that the aggregative absorption rate remains above 90% in the wide spectrum of the infrared regime of the operating wavelength. The given spectra cover the near-infrared, short-infrared and some portion of the far-infrared regime of the electromagnetic spectra. Therefore, the proposed absorber is used for several applications – such as, NIR absorbers are useful for photovoltaic solar cell, photothermal therapy to kill cancer cells, infrared imaging and infrared sensors for night vision. Whereas, short-infrared absorber is useful in semiconductor industry for inspection and detection of defects, medical imaging, and security and surveillance. Moreover, photothermal conversion efficiency is calculated for different operating temperature ranging from 500 K to 1300 K within the 750-3300 nm operating window. For $\:{\eta\:}_{avg}$ calculation, we have set the parameters as; C = 1000, T = 300 K to 700 K, T_ambient = 273 K, I_s = 1000 W. m^-2, and A_avg is the aggregative absorption exists in the operating window. From the bar plot, it can be seen that photothermal efficiency value remain above 90% for the operating temperature of 500 K and 700 K and remains 85% at 1100 K due to high absorption characteristics of the proposed device. Hence the proposed device shows its potential for the photothermal-based applications under the high temperature environment.

To better understand the absorption mechanism of the proposed FSWMA, the effective permittivity, permeability, impedance and refractive index of the absorber were analyzed using the amplitudes and phases of the S-parameters for the normal incidence of the light [46]. The impedance of the absorber is an important parameter to evaluate the absorption feature of the proposed WMA absorber and can be defined as $\:Z=\sqrt{{\mu\:}/\epsilon\:}$. Notably, at resonance, the impedance of the absorber matches with the free-space impedance and unity absorption is attained for the perfect matching condition. The impedance, refractive index, effective permittivity, and permeability values of the material used in the designed absorber are extracted by using [46].

$$\:Z=\:\sqrt{\frac{{\left(1+{S}_{11}\right)}^{2}-{S}_{21}^{2}}{{\left(1-{S}_{11}\right)}^{2}-{S}_{21}^{2}}}$$

$$\:n=\frac{-i{ln}\left({e}^{i{k}_{0}d}\right)}{{k}_{0}d}$$

where k₀ and d represent the wavenumber and thickness of the absorber, respectively. In Eq. (5), $\:{\varvec{e}}^{\varvec{i}{\varvec{k}}_{0}\varvec{d}}=\varvec{X}\pm\:\varvec{i}\sqrt{1-{\varvec{X}}^{2}}$ where $\:\varvec{X}=1/2{\varvec{S}}_{21}\left(1-{{\varvec{S}}_{11}}^{2}+{{\varvec{S}}_{21}}^{2}\right)$. The remaining parameters, effective permittivity and effective permeability are calculated as

$$\:{\varvec{\epsilon\:}}_{\varvec{r}}=\frac{\varvec{n}}{\varvec{Z}}$$

$$\:{\varvec{\mu\:}}_{\varvec{r}}=\varvec{n}\varvec{Z}$$

Figure 3 shows the extracted parameters of the proposed FSWMA. To understand the absorption mechanism, we present the analysis related to the impedance of the proposed absorber for the normal incidence of light. Figure 3(a) show the normalized impedance of the absorber. It is noticed at 1500 nm that both the real part of the normalized impedance is unity and imaginary part of the normalized impedance is zero which corresponds to the perfect. However, the impedance fluctuates above and below the unity for the remaining operating regime, as well as the imaginary part of impendence swings above and below the unity. The unity real impedance and zero imaginary impedance allows the incoming electromagnetic waves to completely penetrate inside the substrate of the proposed FSWMA. Figure 3(b) shows the effective refractive index of the proposed metamaterial absorber. It is observed that the real part of the refractive index remains negative from 1782 to 3300 nm. The negative index medium is used negative reflection/refraction and backward wave propagation. However, the imaginary refractive index remains positive for the entire operating wavelength, as shown by solid red line. Part c and d of Fig. 3 show real and imaginary parts of the permittivity and permeability, respectively. It is noticed that the real part of permittivity and permeability is negative from 1782 to 3330 nm which lead to the negative refraction.

Here, we further discuss the angle-dependent absorption when light falls on the metasurface. Figure 5 shows the absorptivity of the proposed absorber for different polarization of the excited light. It observed that the change in polarization does not affect the absorptivity. Therefore, the proposed absorber shows polarization-independent characteristics due to the symmetric nature of the unit cell structure. As a result, the LSPR remains unaltered due to the change in the polarization of the incidence light. Therefore, the absorptivity remains the same.

Figure 6 shows the absorption results for the obliquity of incidence of light. Here, we take the angle of incidence from 0$\:^\circ\:$ to 60$\:^\circ\:$ and a step size of 15$\:^\circ\:$. Figure 6(a) for the TE mode of excitation, reveals that the angle of excitation has profound effects on the absorption due to the anisotropic nature of the proposed absorber. The corresponding plot shows a blueshift in the absorption bands that exist in the visible and near-infrared regimes of the spectra with the increase in the obliquity of the incidence. Furthermore, considering the absorption band in the near-infrared regime, the increase in the absorptivity value is noticed as the obliquity of incidence increases. However, the absorption band is reduced with the increase of obliquity of incidence. The blue shift in the absorption spectra is observed. On the contrary, for TM mode, the absorptivity reduces with the increase of the incidence angle. However, the blue shift in the absorption spectra is noticed unchanged.

Nanostructure fabrication and design process may reduce performance of the device. Therefore, the devices with high manufacturing tolerance are more desirable. In this section, we present the parametric analysis of the proposed device and vary the different parameters of the unit cell and reveal the performance of the device for ± 10–15% tolerance rate. Figure 7 shows the absorption by varying the parametric values of the absorber under investigation. Figure 7(a) shows the absorptivity for the different thicknesses of the substrate of the absorber while keeping the unit cell period P = 320 nm. The absorptivity is analyzed by varying the thickness of the SiO₂ substrate from 272 to 368 nm. Please note that the absorptivity almost remains same by altering the substrate thickness as obvious in Fig. 7(b) shows the absorption by varying the unit cell period from P = 255 to 345 nm. It is noticed that wideband high absorption of above 80% is observed for P = 180 nm from 1050 to 1800 nm. It is noticed that absorptivity is increased with the increase of the period of the unit cell, however, the absorption band is reduced. For P = 220 nm, the high absorption value such as above 80% is attained from 1000 to 1550 nm and is shown by the solid blue line. Figure 7(c) shows the absorption for different thickness of the Ni layer in the absorbing device. It is can be observed from the figure that impact of the thickness of the Ni remains less ineffectual on the absorption. Henceforth, the device has high manufacturing tolerance.

Table 1 presents the comparison summary of the proposed absorber with several state-of-the-art works while considering some performance metrics. The proposed absorber features a simple design and is low-cost compared to reported studies where gold or other expensive metals have been used. The proposed absorber performs wideband operation with significant absorption in the visible and near-infrared regions. The narrowband operation of the proposed absorber may support sensing and wideband absorption characteristics would be beneficial in solar applications.

Table 1

Performance comparison of proposed absorber with reported works
Geometry	Material	Bandwidth Absorption > 90%	Angular Stability Absorption > 50%	Photothermal efficiency $\:\varvec{\eta\:}$/ T(K)
Nano disks [21]	W and SiO₂	295– 2500nm (2205 nm)	TE (θ = 60°) TM (θ = 60°)	Not discussed
1D multilayered [26]	W and SiO₂	400–1750nm (1350 nm)	TE (θ = 60°) TM (θ = 50°)	91.2% (T_abs = 1273 K)
Nano-disk [37]	TiO₂, SiO₂ and TiN	288.5 -2157.5 nm (1869 nm)	TE (θ = 60°) TM (θ = 60°)	92.83% (T_abs = 1273 K)
1D multilayered [55]	W and SiO₂	300–2000 nm (1700 nm)	---	90.02% (T_abs = 373 K)
Octagonal prism array [56]	W and SiO₂	373–1656 nm (1283 nm)	TE (θ = 50°) TM (θ = 50°)	94.72% (T_abs = 1073 K)
Present Work Fractal shaped	MXene, SiO₂, Ag	436–528 nm (92 nm) 1090–1750 nm (660 nm)	TE (θ = 60°) TM (θ = 50°)	92.2% at 500 K

In the aforesaid discussion, we investigated a fractal absorber and thermal emitter made of MXene operating in the near-infrared, short and far-infrared regimes. The analysis results indicate a high average absorption rate of above 90% and high photothermal efficiency of 92.2% at 500 K within the operating window ranging from 750 to 3300 nm in the near-infrared region. Moreover, the device retains high manufacturing tolerance rate of ± 10–15% for the change in the different parameters of the unit cell and maintain the aggregative absorption rate above 80%. Whereas, for a better understanding of the absorption mechanism, the parametric extraction and surface electric field over the different operating wavelengths is analyzed. The analysis results show that the proposed absorber has attained polarization-independent absorption in its operating bands when the phase of incident light has been varied over the wide angular range. Besides that, the proposed absorber features excellent obliquity to incidence light for TM and TE modes. This device can be useful for the practical use in energy harvesting applications, thermal emitter-based applications, and infrared imaging, etc.

Acknowledgment

Not applicable.

Funding

Not applicable.

Contributions

AA, MA, and MAB conceived idea and design of the presented work. MS and KA put forward theory and worked out results. MAB and XW verified the analytical methods employed. AA and MA concluded the results with support of MAB and MS. AA, MAB, and MS wrote the manuscript with support of XW and KA. All authors deliberated the results and contributed to the final manuscript.

Supplementary information

There is no supplementary information related to this article.

Ethical Statement

Ethical approval is not applicable for this article.

Conflict of Interest

We declare that we have no financial and personal relationships with other people or organizations that can inappropriately influence our work, there is no professional or other personal interest of any nature or kind in any product, service and/or company that could be construed as influencing the position presented in, or the review of, the manuscript entitled.

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Wideband Near-Infrared Absorber with high manufacturing tolerance utilizing MXene Metasurface for industrial thermal applications

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