FT-IR spectra were prepared for NiPc and NiPc@GO to characterize and compare them (Fig. 1). NiPc’s FT-IR spectrum indicated some absorption bands at 1641, 3103, and 3409 cm− 1 related to stretching vibrations attributed to C = N/C = C, aromatic C-H, and O-H, respectively. In the meantime, the spectrum of NiPc@GO also showed those peaks just with a little difference for the peak at 3400 cm− 1 which was appeared in a high intensity due to overlapping of NiPc’s OH peak with that of GO.
One of the valuable methods to characterize GO composites is TEM which can obviously show its structure. So, TEM micrographs were prepared for NiPc@GO expecting to see GO layers containing nanoparticles of NiPc (Fig. 2). The micrographs showed wide sheets of GO with homogeneous distribution of NiPc on the GO with the average particle size between 4.1–4.9 nm. Since the molecular sizes of MPcs are about 1.5 nm, each of the particles was constructed from aggregation of about 3 molecules. This is very ideal system to obtain very fine particles of a MPc in a heterogeneous system, which finally can run the reaction more effectively.
The Raman spectroscopy of NiPc@GO was considered for more confirming the structure since GO’s D-band and G-band absorption peaks can be observed there. As can be seen from Fig. 3, the Raman spectrum of NiPc@GO showed D- and G-bands of GO at 1543 and 1332 cm− 1, respectively. It is crucial to consider that peaks attributed to NiPc appeared in the spectrum such as the peak at 1605 cm− 1 for C = N band.[27]
XRD pattern of NiPc@GO was prepared to determine diffraction peaks related to GO and NiPc. The (001) peak for GO[28] and (100), (102), (213), and (214) peaks of NiPc[29] obviously indicated the synthesized nanocomposite structure (Fig. 4). NiPc content of NiPc@GO was determined to be 0.37 mmol per 1 g of the catalyst by FAAS.
XPS analysis was performed on NiPc@GO to determine various elements on the nanocomposite (Fig. 5). The analysis showed peaks related to C 1s, N 1s, O 1s, Ni 2p3/2, and 2p1/2 at 284.9, 402.3, 533.0, 856.1, and 874.3 eV, respectively. The carbon peak at 285.1 eV is the result of overlapping of peaks at 284.4 eV for C = C, 285.7 eV for C-N, and 286.3 eV for C-O bands, which approves presence of two different kinds of structures including Pc and GO. The peaks related to N, and Ni also obviously approve the presence of NiPc in the prepared composite.
Before starting the photocatalytic reaction using various composites based on NiPc, UV-Vis spectra were prepared for NiPc and NiPc@GO to achieve a knowledge about their desired operation wavelength (Fig. 6). Both NiPc and NiPc@GO indicated absorptions under 440 nm and above 460 nm with higher absorption intensity for NiPc@GO. As a result, both NiPc and NiPc@GO should induce high efficiency under visible irradiation for TiO2 which is employed as an eminent photocatalyst in the UV region.
The H2 production reaction of a dye-sensitized semiconductor composite is usually affected by a series of circumstances such as electron donating system, irradiation wavelength, sensitizing capability and so on.[30] NiPc@GO/TiO2 was considered for the H2 production since the composite would afford most of the desired conditions for the photocatalytic reaction. Pcs as the potent sensitizers have a conjugated Π system with absorption areas at 620–700 nm known as Q band and about 350 nm known as Soret B band.[31] These absorptions permit to Pcs to have a great ability as a sensitizer in a wide range of wavelengths leading to use of NiPc as a sensitizer in semiconductors.[32] In addition, GO by contribution of its Fermi levels facilitates the electron transportation on TiO2 levels as the semiconductor.[33] In this work, the photocatalytic activity of NiPc@GO/TiO2 was evaluated in the H2 production from formic acid under Vis irradiation. In the meantime, the effects of various ingredients of the catalyst were investigated on the reaction yield (Table 1).
The catalytic performance of NiPc@GO was investigated in the degradation of FA in the presence and absence of TiO2 under ambient conditions (Table 1). The results exhibited a high activity for NiPc@GO/TiO2 in the degradation reaction toward H2 generation under visible light providing 1.38 mmol.h− 1 H2 using 18 µmol of the catalyst. H2 production was decreased to 0.63 mmol.h− 1 in the presence of NiPc/TiO2 under visible irradiation, which approves contribution of GO in the reaction progress. The phenomenon is intelligible considering that GO’s Fermi levels are inserted in TiO2 band gaps. This can also be observed from the result of degradation reaction by GO/TiO2 with 0.49 mmol.h− 1 H2 production rate, while as mentioned the reaction did not proceed using bare TiO2. In the meantime, the reaction was examined employing NiPc@GO as the catalyst with 0.92 mmol.h− 1 hydrogen production rate. In spite of the fact that lack of TiO2 as a semiconductor should significantly decreases the yield; this negligible decline is not strange when we find out that phthalocyanines are also semiconductor.34 The minimum TiO2 required for obtaining high yield was achieved 0.04 g. The reaction yield was reduced dramatically in a dark room revealing the photo-induced pathway for the reaction. Turnover frequency (TOF) was calculated for the reaction by NiPc@GO/TiO2 about 77 h− 1 which is a high number regarding mild conditions of the reaction. In all tests, only signals assigned to H2 and CO2 were detected by gas chromatography without any CO signal.
Table 1
H2 production by various catalysts from FA degradation reaction
Entry
|
catalyst
|
H2 produced (mmol)
|
Under Vis
|
Dark room
|
1
|
TiO2
|
-
|
-
|
2
|
GO
|
-
|
-
|
3
|
NiPc
|
0.61
|
0.067
|
4
|
TiO2/NiPc
|
0.63
|
0.067
|
5
|
TiO2/GO
|
0.49
|
-
|
6
|
NiPc@GO
|
0.92
|
0.045
|
7
|
TiO2 (0.03 g)/NiPc /GO (0.05 g)
|
1.34
|
0.054
|
8
|
TiO2 (0.04 g)/NiPc (0.05 g)/GO (0.05 g)
|
1.38
|
0.054
|
9
|
TiO2 (0.05 g)/NiPc (0.05 g)/GO (0.05 g)
|
1.38
|
0.054
|
Reaction conditions: FA (30 ml), catalyst, r.t., 1h.
|
The kinetic study was carried out on the reaction via investigation of temperature effect on the reaction assuming that the reaction is not diffusion-limited below 57 ⁰C. Temperature had an important influence on the catalytic activity of NiPc@GO/TiO2 and NiPc@GO, where a high temperature was beneficial for the dehydrogenation reaction (Fig. 7). Moreover, the activation energy (Ea) was calculated to be 9.1 and 19.0 kJ/mol for the reaction by NiPc@GO/TiO2 and NiPc@GO, respectively. These values are considerably lower than most previously reported Ea values.[13]
Potential NiPc leaching into the mixture of FA degradation reaction was also analyzed with FAAS analysis. For this purpose, filtrate of the heterogeneous degradation reaction of FA after 1 h was passed from a syringe filter and then dissolved in HNO3. The FAAS analysis of sample evinced that the Ni concentration in the reaction mixture was less than the detection limit. This result indicates that virtually no NiPc leaches from NiPc@GO into the mixture. A hot filtration test was also performed on NiPc@GO by removing the catalyst from the reaction mixture after 10 min and monitoring the reaction progress. Under this condition, gas releasing was completely quenched confirming heterogeneously done the reaction. Finally, the catalyst stability was examined in the reaction mixture. For that, the light source was removed after 1 h and irradiation was performed again after 24 h. This cycle was repeated for 5 cycles with 1.38 mmol.h-1 H2 was produced in each of them, which shows as expected TiO2, NiPc, and GO are stable in formic acid.