Catalyst Preparation. Single site Ga/SiO2 and Zn/SiO2 were prepared following the procedures previously reported in literature, using standard catalyst synthesis techniques, and compared to a Ni/SiO2 control.23,24,50
Ga/SiO2 was synthesized with a chelating agent to prevent the formation of Ga2O3 using pH-controlled incipient wetness impregnation (IWI). 10 g of Davisil silica with grade 636 (pore size = 60 Å, surface area = 480 m2/g) was impregnated with an aqueous solution containing 1.5 g of gallium nitrate solution (Ga(NO3)3 xH2O, Fluka chemical) and 1.5 g of citric acid (Sigma Aldrich) dissolved in Millipore water. The catalyst was dried for 16 hours at 125 °C and then calcined at 500 °C for 3 hours. Atomic absorption spectroscopy (AAS) was used to determine that the final catalyst contained approximately 2.6 wt% Ga.
Zn/SiO2 was synthesized using pH-controlled strong electrostatic adsorption (SEA). A solution containing 2.5 g of zinc nitrate hexahydrate (Zn(NO3)2 6H2O, Sigma Aldrich) was made and the pH was adjusted to 11 using 30% ammonium hydroxide (NH4OH) solution, until a clear solution was obtained. 10 g of Davisil silica was suspended 100 mL of Millipore water in a separate beaker and the pH was adjusted to 11 using NH4OH. The Zn solution was added rapidly to the SiO2 solution and stirred for 20 minutes. After the solid was settled, the solution was decanted, and the resulting slurry was washed with Millipore water and collected by vacuum filtration. The catalyst was dried for 16 hours at 125 °C and then calcined at 300 °C for 3 hours. AAS was used to determine that the final catalyst contained approximately 4.0 wt% Zn.
Ni/SiO2 was prepared by pH-controlled SEA. A solution containing 3.0 g of nickel nitrate hexahydrate (Ni(NO3)2 6H2O) was prepared and the pH was adjusted to 11 using 30% NH4OH solution until a clear blue solution was obtained. 10 g of Davisil silica was added to the solution and the suspension was stirred for 20 minutes. At the end of the reaction, additional NH4OH was added to the solution to maintain a pH of 11. The suspension was stirred for another 10 minutes before being filtered and the catalyst was recovered. The catalyst was dried for 16 hours at 125 °C and then calcined at 300 °C for 3 hours. AAS was used to determine that the final catalyst contained approximately 2.7 wt% Ni.
Catalyst Testing. Oligomerization tests were performed at atmospheric pressure in pure ethylene or pure propylene using a fixed bed reactor of 3/8-inch OD. The weight of catalyst loaded into the reactor ranged from 0.5 g to 1 g and was diluted with silica to reach a total of 1 g. The catalyst was treated in 50 ccm of N2 while it ramped to 250 °C for the reaction. The reaction was performed in 100% C2H4 using GHSVs ranging from 0.08 s− 1 to 0.38 s− 1. Products from the atmospheric pressure reactor were analyzed with a Hewlett Packard (HP) 6890 Series gas chromatograph (GC) using a flame ionization detector (FID) with an Agilent HP-Al/S column (25 m in length, 0.32 mm ID, and 8 µm film thickness).
High pressure oligomerization was performed in a stainless steel, fixed bed reactor of 1/2-inch OD. 2 g of catalyst was loading into the reactor. The reactor was pressurized to 450 psig (30.6 atm) and the catalyst was treated in 50 ccm of N2 while it ramped to 250 °C for the reaction. The reaction was performed in a mixture of 10 ccm 5% CH4/N2 for an internal standard and 50 ccm 100% C2H4 at a total pressure of 450 psig. Products were analyzed with a Hewlett Packard (HP) 7890 Series gas chromatograph (GC) using a flame ionization detector (FID) with an Agilent HP-1 column (60 m in length, 0.32 mm ID, and 25 µm film thickness).
Characterizations.
In Situ X-ray Absorption Spectroscopy (XAS)
In-situ XAS was performed at the Ga K (10.3670 keV), Zn K (9.659 keV), and Ni K (8.333 keV) edges at the 10-BM sector at the Advanced Photon Source at Argonne National Laboratory using transmission mode with scan ranges from 250 keV below the edge to 800 keV above the edge. At the Ga K edge, the samples were calibrated to Ga2O3 (10.3751 keV). Samples were pressed into a stainless-steel sample holder and placed in a quartz-tube sample cell with gas flow capabilities. The structure of each catalyst was studied after dehydration at 550 °C in He. The sample cell was cooled to room temperature and scanned. The resulting structure of each was compared to known references including Ga acetylacetonate (Ga(AcAc)3), Ga oxide (Ga2O3), Zn oxide (ZnO), and Ni oxide (NiO) to confirm the oxidation state and coordination environment (i.e. coordination number and bond distance). The data was processed using the WinXAS v.3.1 software59 to find the coordination number and bond distance using standard procedures. Feff6 calculations were performed using Ga2O3 (50% at CN = 4, R = 1.83 Å and 50% CN = 6 at 2.00 Å), ZnO (CN = 4, R = 1.98 Å), and NiO (CN = 6, R = 2.09 Å) respectively for reference. A least squared fit for the first shell of r-space and isolated q-space were performed on the k2 weighted Fourier transform data over the range of 2.7 to 10 Å−1 in each spectrum to fit the magnitude and imaginary components.
An understanding of reactive intermediates was obtained on Ga/SiO2 and Zn/SiO2 using in situ XAS. A furnace was placed on the beamline around the sample cell to allow for structural measurements at high temperature. Data was continuously collected as the temperature ramped in pure H2 to 550 °C. Once the structure was stabilized (i.e. the resulting XAS spectra remained unchanged), the cell was cooled to 250 °C in pure H2 while scanning continuously. When the structure was stabilized, the temperature was held constant at 250 °C and the gas flow was switched from pure H2 to pure C2H4. Measurements in He were also obtained at 250 °C and 550 °C. The XANES were used to determine the oxidation state and geometry while select EXAFS spectra were used to determine the coordination number and bond distances of the M-O bonds (M = Ga, Zn).
H/D Isotope Exchange Experiments
To confirm the formation of the metal hydride intermediates and count the number of active metal hydride sites that form, a H2/D2 isotopic exchange experiment was performed using a Micromeritics Autochem II 2920 chemisorption analyzer, equipped with a residual gas analyzer (RGA). Calibrations for the H2, D2, and HD signal were performed in a bypass line while the sample was being dehydrated at 500 °C in inert gas. For the HD calibration, two separate gas mixtures containing 5% H2/95% Ar and 5% D2/95% Ar were combined in different relative amounts in a bypass line to measure initial feed H2/D2 ratios in balance Ar compositions. Samples were loaded into a quartz U-tube reactor and treated in flowing air for dehydration at 500 °C before being cooled to 250 °C. The sample was exposed to 5% H2/Ar for 1 hour and then switched to 5% D2/Ar while the signals for H2, D2 and HD were recorded on the RGA. During this time, the H2 signal returned to its baseline, the D2 signal increased to its feed value, and the HD signal increased immediately and decreased with time as D2 reacted with H atoms in metal hydrides to form HD and metal deuterides. Once the HD signal reached baseline values, the gas flow was switched from 5% D2/Ar to 5% H2/Ar to quantify the HD formed in the reverse isotopic exchange experiment, and this was repeated for a total of four switches and averaged to estimate the number of metal-hydride sites present.
H2/D2 isotopic exchange in a temperature programmed surface reaction (TPSR) was performed to identify the number of different metal specific in a catalyst. First, the catalyst was dehydrated at 500 °C treated in air for 2 h. Then, the sample was cooled to 450 °C in air. The catalyst was treated in 5% H2/95% Ar at 450 °C for 2 h. The temperature was cooled to ambient in 5% H2/95% Ar. Then, 5% H2/95% Ar was switched to 5% D2/95% Ar and the temperature was increased from 35 to 900 °C.
Fourier Transform Infrared Spectroscopy (FT-IR)
Infrared (IR) spectra were collected using a Nicolet 4700 spectrometer with a Hg-Cd-Te detector (MCT, maintained at -196 °C by liquid N2). Each spectrum represents the average of 64 scans at 2 cm− 1 resolution from 4000 to 400 cm− 1 and were taken using an empty cell background reference (30 °C) collected under dynamic vacuum (rotary vane rough pump, Alcatel 2008A, < 0.01 kPa). In a typical experiment, 0.02–0.04 g cm− 2 of sample were pressed into self-supporting wafers of Ga/SiO2 and held in a custom-built quartz IR cell with CaF2 windows. IR cells were inserted into a mineral-insulated heating coil (ARi Industries) contained within an alumina silicate ceramic chamber (Purdue Research Machining Services). The quartz IR cell was connected to a glass vacuum manifold that was used for sample pretreatment and exposure to gas-phase, pure ethylene. When the Ga/SiO2 sample was loaded, it was dehydrated in He at 550 °C for 2 h and a spectrum of the dehydrated sample was obtained. Then, the catalyst was cooled to ambient temperature and exposed to pure H2. The temperature was ramped to 550 °C in pure H2 at a rate of 10 °C/min while spectra were collected every 5 minutes. The temperature was held at 550 °C in pure H2 for 1 h and then cooled to ambient temperature. The gas was switched to pure C2H4 and the temperature was ramped at 10 °C/min to 250 °C, while collecting spectra every 5 minutes. The temperature was held at 250 °C for 2 h. A second Ga/SiO2 wafer was prepared and dehydrated using the same method as detailed above. The catalyst was cooled to ambient temperature and exposed directly to pure C2H4. The temperature was ramped at 10 °C/min to 250 °C while collecting spectra every 5 minutes, and the C2H4 treated sample spectra were compared the sample with and without H2 pretreatment. IR spectra reported here were baseline corrected, and the spectra shown are difference spectra with that of the dehydrated catalyst subtracted from those of the treated catalysts.
Density Functional Theory (DFT)
Ga/SiO2 systems are based on a recently developed amorphous silica model using molecular dynamics and continuous dehydration processes.56 A periodic amorphous silica model (21.6 Å × 21.6 Å × 34.5 Å; 372 atoms) was used to analyze the energetics of Ga-H formation and ethylene oligomerization. Ga sites were generated by substituting Si atoms and adding a proton to maintain charge balance. All DFT calculations are performed with self-consistent and periodic density functional theory using the Vienna Ab-initio Simulation Package (VASP).60–64 The BEEF-VdW exchange-correlation functional65, using projector augmented wave (PAW) pseudopotentials64,66, was employed. A dipole correction was applied parallel to the plane of the slab to reduce image interaction errors. A k point grid of 2 × 2 × 1 was used based on Monkhorst-Pack k-sampling. A cutoff energy of 400 eV and a force-convergence criterion of 20 meV Å−1 for local minima were considered. Transition state geometries were obtained through a climbing-image nudged-elastic-band (NEB) method67,68, where for each elementary step, seven images were generated as the initial guesses using the Image Dependent Pair Potential pre-optimizer.69 After an NEB calculation was converged, where the force exerted on each image was below 100 meV Å−1, the LANCZOS diagonalization approach was employed to locate the transition state with a force-convergence criterion of 80 meV Å−1.70 The harmonic vibrational states were used for zero-point vibrational energy corrections (EZPE), and these also formed the basis for estimating entropies of the adsorbates. However, for the vibration modes with low wave numbers (< 150 cm− 1), particle-in-a-box (PIB) and free rotor schemes were used for calculating their contributions to the entropies, depending on the geometric characteristics of the vibration (see Supporting Information for an example). Free energies, evaluated at 250 °C, were obtained using the following equation: G = EDFT + EZPE -TS, where EDFT is the ground-state potential energy calculated using DFT. The calculation of adsorption energy (Gads) use the reference site energy (GGa), which can either be an empty Ga site or Ga hydride, and the gaseous ethylene molecule at 1 atm (Gethylene): Gads= GA – GGa – X × Gethylene, where X is a stoichiometrically appropriate number of reference ethylene molecules.